X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsic.tex;h=1b09e3ddeea10783896a20f2f0ef327877232d94;hp=cb46a7b4b5b238ba07400122f5bc09c0365bb044;hb=aceecd26df3677e45b2d64d82fe700a8e626f9e5;hpb=46f67509943dd32ee23123168681f64f252a5ec4

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index cb46a7b..1b09e3d 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -26,13 +26,21 @@ The polytypes differ in the one-dimensional stacking sequence of identical, clos
 Each SiC bilayer can be situated in one of three possible positions (abbreviated a, b or c) with respect to the lattice while maintaining the tetrahedral bonding scheme of the crystal.
 \begin{figure}[t]
 \begin{center}
-\includegraphics[width=10cm]{polytypes.eps}
+\includegraphics[height=5.5cm]{polytypes_own.eps}\\[0.1cm]
+\begin{minipage}{0.45\textwidth}
+{\small
+\hspace*{0.05cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.44cm} a \hspace*{0.09cm} b \hspace*{0.09cm} c \hspace*{0.09cm} a\\
+\hspace*{0.5cm} 3C \hspace*{0.9cm} 2H \hspace*{1.0cm} 4H \hspace*{1.3cm} 6H
+}
+\end{minipage}
+%\includegraphics[width=10cm]{polytypes.eps}
 \end{center}
-\caption{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.}
+\caption[Stacking sequence of SiC bilayers of the most common polytypes of SiC.]{Stacking sequence of SiC bilayers of the most common polytypes of SiC (from left to right): 3C, 2H, 4H and 6H.}
 \label{fig:sic:polytypes}
 \end{figure}
 Fig.~\ref{fig:sic:polytypes} shows the stacking sequence of the most common and technologically most important SiC polytypes, which are the cubic (3C) and hexagonal (2H, 4H and 6H) polytypes.
 
+\bibpunct{}{}{,}{n}{}{}
 \begin{table}[t]
 \begin{center}
 \begin{tabular}{l c c c c c c}
@@ -51,9 +59,10 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 \hline
 \end{tabular}
 \end{center}
-\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite{wesch96,casady96,park98}.}
+\caption[Properties of SiC polytypes and other semiconductor materials.]{Properties of SiC polytypes and other semiconductor materials. Doping concentrations are $10^{16}\text{ cm}^{-3}$ (A) and $10^{17}\text{ cm}^{-3}$ (B) respectively. References: \cite[]{wesch96,casady96,park98}.}
 \label{table:sic:properties}
 \end{table}
+\bibpunct{[}{]}{,}{n}{}{}
 % todo add more refs + check all values!
 Different polytypes of SiC exhibit different properties.
 Some of the key properties are listed in Table~\ref{table:sic:properties} and compared to other technologically relevant semiconductor materials.
@@ -94,7 +103,7 @@ Thus the cubic phase is most effective for highly efficient high-performance ele
 \begin{center}
 \includegraphics[width=0.35\columnwidth]{sic_unit_cell.eps}
 \end{center}
-\caption{3C-SiC unit cell. Yellow and grey spheres correpsond to Si and C atoms respectively. Covalent bonds are illustrated by blue lines.}
+\caption[3C-SiC unit cell.]{3C-SiC unit cell. Yellow and grey spheres correpsond to Si and C atoms respectively. Covalent bonds are illustrated by blue lines.}
 \label{fig:sic:unit_cell}
 \end{figure}
 Its unit cell is shown in Fig.~\ref{fig:sic:unit_cell}.
@@ -280,7 +289,7 @@ Fig. \ref{fig:sic:hrem_sharp} shows the respective high resolution transmission
 \begin{center}
 \includegraphics[width=0.6\columnwidth]{ibs_3c-sic.eps}
 \end{center}
-\caption[Bright field (a) and \hkl(1 1 1) SiC dark field (b) cross-sectional TEM micrographs of the buried SiC layer in Si created by the two-temperature implantation technique and subsequent annealing.]{Bright field (a) and \hkl(1 1 1) SiC dark field (b) cross-sectional TEM micrographs of the buried SiC layer in Si created by the two-temperature implantation technique and subsequent annealing as explained in the text \cite{lindner99_2}. The inset shows a selected area diffraction pattern of the buried layer.}
+\caption[Bright field and \hkl(1 1 1) SiC dark field cross-sectional TEM micrographs of the buried SiC layer in Si created by the two-temperature implantation technique and subsequent annealing.]{Bright field (a) and \hkl(1 1 1) SiC dark field (b) cross-sectional TEM micrographs of the buried SiC layer in Si created by the two-temperature implantation technique and subsequent annealing as explained in the text \cite{lindner99_2}. The inset shows a selected area diffraction pattern of the buried layer.}
 \label{fig:sic:hrem_sharp}
 \end{figure}
 
@@ -366,7 +375,7 @@ The agglomerates of such dimers, which do not generate lattice strain but lead t
 \subfigure[]{\label{fig:sic:hrem:c-si}\includegraphics[width=0.25\columnwidth]{tem_c-si-db.eps}}
 \subfigure[]{\label{fig:sic:hrem:sic}\includegraphics[width=0.25\columnwidth]{tem_3c-sic.eps}}
 \end{center}
-\caption[High resolution transmission electron microscopy (HREM) micrographs of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes (a) and equally sized Moir\'e patterns indicating 3C-SiC precipitates (b).]{High resolution transmission electron microscopy (HREM) micrographs \cite{lindner99_2} of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes (a) and equally sized Moir\'e patterns indicating 3C-SiC precipitates (b).}
+\caption[High resolution transmission electron microscopy (HREM) micrographs of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes and equally sized Moir\'e patterns indicating 3C-SiC precipitates.]{High resolution transmission electron microscopy (HREM) micrographs \cite{lindner99_2} of agglomerates of C-Si dimers showing dark contrasts and otherwise undisturbed Si lattice fringes (a) and equally sized Moir\'e patterns indicating 3C-SiC precipitates (b).}
 \label{fig:sic:hrem}
 \end{figure}
 A topotactic transformation into a 3C-SiC precipitate occurs once a critical radius of \unit[2]{nm} to \unit[4]{nm} is reached.
@@ -421,5 +430,3 @@ On the other hand, processes relying upon prevention of precipitation in order t
 % strane94/guedj98: my model - c redist by si int (spe) and surface diff (mbe)
 % serre95: low/high t implants -> mobile c_i / non-mobile sic precipitates
 
-% todo - own polytype stacking sequence image
-