X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsic.tex;h=354f9f57e974a368232edb54d91ada5d5cc6a98f;hp=dd18103cda2349e07577e270ccfaf86423f0a892;hb=a141d46595869e132fe461227a1bc820efae3ad8;hpb=2231d0370c8a7f8e8ac31372c3403049aaddb1a2

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index dd18103..354f9f5 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -168,9 +168,9 @@ During carbonization the Si surface is chemically converted into a SiC film with
 In a next step, the epitaxial deposition of SiC is realized by an additional supply of Si atoms at similar temperatures.
 Low defect densities in the buffer layer are a prerequisite for obtaining good quality SiC layers during growth, although defect densities decrease with increasing distance of the SiC/Si interface \cite{shibahara86}.
 Next to surface morphology defects such as pits and islands, the main defects in 3C-SiC heteroepitaxial layers are twins, stacking faults (SF) and antiphase boundaries (APB) \cite{shibahara86,pirouz87}.
+APB defects, which constitute the primary residual defects in thick layers, are formed near surface terraces that differ in a single-atom-height step resulting in domains of SiC separated by a boundary, which consists of either Si-Si or C-C bonds due to missing or disturbed sublattice information \cite{desjardins96,kitabatake97}.
+However, the number of such defects can be reduced by off-axis growth on a Si \hkl(0 0 1) substrate miscut towards \hkl[1 1 0] by \unit[2]{$^{\circ}$}-\unit[4]{$^{\circ}$} \cite{shibahara86,powell87_2}.
 
-
-off-axis \cite{shibahara86,powell87_2} ...
 resulting in carb and growth \cite{kitabatake97} ...
 
 lower temps ... to limit thermal stress due to differing expansion coefficients ...