X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsic.tex;h=77e41a2da6b60971bb2ebec2dfd1fa6b8b667c7d;hp=8af85c04460293d8898e5789ad73df57b7ab73ef;hb=f316cc9ddb491de92198b606180c19aecfc88ddf;hpb=8a555497a121caff7bc77fffbeb52269e53c8868

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
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--- a/posic/thesis/sic.tex
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@@ -220,10 +220,9 @@ Solving this issue remains a challenging problem necessary to drive SiC for pote
 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.
-In the following ...
 
 High-dose carbon implantation into \ac{c-Si} with subsequent or in situ annealing was found to result in SiC microcrystallites in Si \cite{borders71}.
-\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit{10}[at.\%] C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
+\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
 
 Utilized and enhanced, 30 years devel ... (-32)
 By understanding some basci processes (32-36), \ac{IBS} nowadays has become a promising method to form thin SiC layers of high quality exclusively of the 3C polytype embedded in and epitactically aligned to the Si host featuring a sharp interface \cite{lindner99,lindner01,lindner02}.