X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsic.tex;h=abcdd3e0a48ed8cdd2b6fb5b9c7ffd864e66e93b;hp=ee9f2c8731af991a789d7ee8009ad0d9ae864393;hb=0b8f9b2a929b9b3b1d21bca4288dd813258786ed;hpb=9965e19a285d1af2b8b0a47d62f95904c6507a3f

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index ee9f2c8..abcdd3e 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -173,9 +173,17 @@ However, the number of such defects can be reduced by off-axis growth on a Si \h
 This results in the thermodynamically favored growth of a single phase due to the uni-directional contraction of Si-C-Si bond chains perpendicular to the terrace steps edges during carbonization and the fast growth parallel to the terrace edges during growth under Si rich conditions \cite{kitabatake97}.
 By MBE, lower process temperatures than these typically employed in CVD have been realized \cite{hatayama95,henke95,fuyuki97,takaoka98}, which is essential for limiting thermal stresses and to avoid resulting substrate bending, a key issue in obtaining large area 3C-SiC surfaces.
 In summary, the almost universal use of Si has allowed significant progress in the understanding of heteroepitaxial growth of SiC on Si.
-However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not not yet statisfactory.
+However, mismatches in the thermal expansion coefficient and the lattice parameter cause a considerably high concentration of various defects, which is responsible for structural and electrical qualities that are not yet statisfactory.
+
+The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
+By CVD, both, the 3C \cite{kong88,powell90,powell91} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
+In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}.
+%In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
+Investigations indicate that in so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
+A model is suggested ...
+
+... diffusion of reactants in a stagnant layer.
 
-SiC on SiC epitaxy ...
 
 \section{Ion beam synthesis of cubic silicon carbide}