X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsic.tex;h=f5e5b841d328d44b8f324a8017262763fca6084d;hp=b6179d21325bbac0ab3f2505aeb7dde980dccfdd;hb=0e66d3c664ff4a68a8000bd4ee9ae9350fbe69ed;hpb=de15a616e358375e0fe22841c5776933d9e1f75c

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index b6179d2..f5e5b84 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -294,7 +294,7 @@ Indeed, reasonable results were obtained at \unit[500]{$^{\circ}$C}~\cite{lindne
 To further improve the interface quality and crystallinity, a two-temperature implantation technique was developed~\cite{lindner99}.
 To form a narrow, box-like density profile of oriented SiC nanocrystals, \unit[93]{\%} of the total dose of \unit[$8.5\cdot 10^{17}$]{cm$^{-2}$} is implanted at \unit[500]{$^{\circ}$C}.
 The remaining dose is implanted at \unit[250]{$^{\circ}$C}, which leads to the formation of amorphous zones above and below the SiC precipitate layer and the destruction of SiC nanocrystals within these zones.
-After annealing for \unit[10]{h} at \unit[1250]{$^{\circ}$C} a homogeneous, stoichiometric SiC layer with sharp interfaces is formed.
+After annealing for \unit[10]{h} at \unit[1250]{$^{\circ}$C}, a homogeneous, stoichiometric SiC layer with sharp interfaces is formed.
 Fig.~\ref{fig:sic:hrem_sharp} shows the respective high resolution transmission electron microscopy micrographs.
 \begin{figure}[t]
 \begin{center}