X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsic.tex;h=f96a8cecdb358cba491bde9314b79ffb7d43d10d;hp=5d1f802461b2fd25af6fd169d118a6dca8f59fc3;hb=20131536ceadd87f72f2fdd993f0aa39cfc6d2d2;hpb=f620fbbbffc5f8c5ebe4c8a4e6f627a11d1dae53

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 5d1f802..f96a8ce 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -217,6 +217,7 @@ However, the frequent occurence of defects such as dislocations, twins and doubl
 Solving this issue remains a challenging problem necessary to drive SiC for potential applications in high-performance electronic device production \cite{wesch96}.
 
 \subsection{Ion beam synthesis of cubic silicon carbide}
+\label{subsection:ibs}
 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.