X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsummary_outlook.tex;fp=posic%2Fthesis%2Fsummary_outlook.tex;h=88d022b46f37d56c97bea94cb2b38c778521a03f;hp=8b6a6db6a166f669b24f762b35998f7b608be3e7;hb=778c927e5b4cf8c1ff38783733ed2dd7c23e6e90;hpb=959d7713613510d1ad5af4419e3f106b34d4b057

diff --git a/posic/thesis/summary_outlook.tex b/posic/thesis/summary_outlook.tex
index 8b6a6db..88d022b 100644
--- a/posic/thesis/summary_outlook.tex
+++ b/posic/thesis/summary_outlook.tex
@@ -1,8 +1,6 @@
 \chapter{Summary and conclusions}
 \label{chapter:summary}
 
-{\setlength{\parindent}{0pt} 
-%\paragraph{To summarize,}
 {\bf To summarize},
 in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
 }
@@ -128,10 +126,7 @@ Entropic contributions are assumed to be responsible for these structures at ele
 Indeed, utilizing increased temperatures is assumed to constitute a necessary condition to simulate IBS of 3C-SiC in c-Si.
 \\
 \\
-% todo - sync with respective conclusion chapter
-%
 % conclusions 2nd part
-%\paragraph{Conclusions}
 {\bf Conclusions}
 concerning the SiC conversion mechanism are derived from results of both, first-principles and classical potential calculations.
 Although classical potential MD calculations fail to directly simulate the precipitation of SiC, obtained results, on the one hand, reinforce previous findings of the first-principles investigations and, on the other hand, allow further conclusions on the SiC precipitation in Si.