X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsummary_outlook.tex;fp=posic%2Fthesis%2Fsummary_outlook.tex;h=c479767a08535dad394b164a4d8e0bfb1a768bb8;hp=88d022b46f37d56c97bea94cb2b38c778521a03f;hb=0be3170f71ac64329a837ad430a4561ce2bc9a90;hpb=778c927e5b4cf8c1ff38783733ed2dd7c23e6e90

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 {\bf To summarize},
 in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
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 These propose the precipitation of SiC by agglomeration of \ci{} DBs followed by a sudden formation of SiC and otherwise a formation by successive accumulation of \cs{} via intermediate stretched SiC structures, which are coherent to the Si lattice.
 To solve this controversy and contribute to the understanding of SiC precipitation in c-Si, a series of atomistic simulations is carried out.
 In the first part, intrinsic and C related point defects in c-Si as well as some selected diffusion processes of the C defect are investigated by means of first-principles quantum-mechanical calculations based on DFT and classical potential calculations employing a Tersoff-like analytical bond order potential.