X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=blobdiff_plain;f=posic%2Fthesis%2Fsummary_outlook.tex;h=735870c52db9e445d4df30d0039035733e88f774;hp=c999425e88aae7627e5452fb5c37d39221365f27;hb=dfeb4ccb085d878b5639dcaea7fcb7fcdc5248ad;hpb=5c140338a7cab0ea646c8c387df2d9bf6df6f8af

diff --git a/posic/thesis/summary_outlook.tex b/posic/thesis/summary_outlook.tex
index c999425..735870c 100644
--- a/posic/thesis/summary_outlook.tex
+++ b/posic/thesis/summary_outlook.tex
@@ -2,7 +2,8 @@
 \label{chapter:summary}
 
 {\setlength{\parindent}{0pt} 
-\paragraph{To summarize,}
+%\paragraph{To summarize,}
+{\bf To summarize},
 in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated.
 }
 These propose the precipitation of SiC by agglomeration of \ci{} DBs followed by a sudden formation of SiC and otherwise a formation by successive accumulation of \cs{} via intermediate stretched SiC structures, which are coherent to the Si lattice.
@@ -125,12 +126,13 @@ Loose structures of stretched SiC, which are adjusted to the Si lattice with res
 \si{} is often found in the direct surrounding.
 Entropic contributions are assumed to be responsible for these structures at elevated temperatures that deviate from the ground state at 0 K.
 Indeed, utilizing increased temperatures is assumed to constitute a necessary condition to simulate IBS of 3C-SiC in c-Si.
-
-
+\\
+\\
 % todo - sync with respective conclusion chapter
-
+%
 % conclusions 2nd part
-\paragraph{Conclusions}
+%\paragraph{Conclusions}
+{\bf Conclusions}
 concerning the SiC conversion mechanism are derived from results of both, first-principles and classical potential calculations.
 Although classical potential MD calculations fail to directly simulate the precipitation of SiC, obtained results, on the one hand, reinforce previous findings of the first-principles investigations and, on the other hand, allow further conclusions on the SiC precipitation in Si.
 
@@ -185,7 +187,7 @@ More substantially, understoichiometric implantations at room temperature into p
 The strained structure is found to be stable up to \degc{810}.
 Coherent clustering followed by precipitation is suggested if these structures are annealed at higher temperatures.
 %
-Similar, implantations of an understoichiometric dose into c-Si at room temperature followed by thermal annealing result in small spherical sized C$_{\text{i}}$ agglomerates below \unit[700]{$^{\circ}$C} and SiC precipitates of the same size above \unit[700]{$^{\circ}$C}\cite{werner96} annealing temperature.
+Similar, implantations of an understoichiometric dose into c-Si at room temperature followed by thermal annealing result in small spherical sized C$_{\text{i}}$ agglomerates below \unit[700]{$^{\circ}$C} and SiC precipitates of the same size above \unit[700]{$^{\circ}$C} \cite{werner96} annealing temperature.
 Since, however, the implantation temperature is considered more efficient than the postannealing temperature, SiC precipitates are expected and indeed observed for as-implanted samples \cite{lindner99,lindner01} in implantations performed at \unit[450]{$^{\circ}$C}.
 According to this, implanted C is likewise expected to occupy substitutionally regular Si lattice sites right from the start for implantations into c-Si at elevated temperatures.
 %