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diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 5047308..69d6bc6 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -57,15 +57,9 @@ Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
 Different polytypes of SiC exhibit different properties.
 Some of the key properties are listed in Table~\ref{table:sic:properties} and compared to other technologically relevant semiconductor materials.
 Despite the lower charge carrier mobilities for low electric fields SiC outperforms Si concerning all other properties.
-The wide band gap, large breakdown field and high saturation drift velocity make SiC an ideal candidate for high-temperature, high-power and high-frequency electronic devices exhibiting high efficiency.
+The wide band gap, large breakdown field and high saturation drift velocity make SiC an ideal candidate for high-temperature, high-power and high-frequency electronic devices exhibiting high efficiency~\cite{edgar92,pensl93,morkoc94,casady96,wesch96,capano97,park98}.
 In addition the high thermal conductivity enables the implementation of small-sized electronic devices enduring increased power densites.
-
-Negligible junction leakage currents at elevated temperatures due to the high band gap allow high-temperature operations without excessive leakage.
-Even non-volatile dynamic random access memory (DRAM) at room temperature can generally be realized by SiC based electronics~\cite{}.
-Additionally the wide band gap allows SiC to be used in UV detectors.
-The high saturation electron drift velocity provides higher currents and higher cut-off frequencies for SiC based high-frequency and high-power devices, such as microwave devices.
-The high breakdown strength enables the realization of electronic switching devices enduring high power densities.
-The high thermal conductivity permits ...
+Its formidable mechanical stability, heat resistant, radiation hardness and low neutron capture radius cross section allow operation in harsh and radiation-hard environments~\cite{capano97}.
 
 Despite high-temperature operations the wide band gap also allows the use of SiC in optoelectronic devices.
 Indeed, a forgotten figure, Oleg V. Losev discovered what we know as the light emitting diode (LED) today in the mid 1920s by observing light emission from SiC crystal rectifier diodes used in radio receivers when a current was passed through them~\cite{losev27}.
@@ -76,10 +70,9 @@ Due to the indirect band gap and, thus, low light emitting efficiency, however,
 However, even for GaN based diodes SiC turns out to be of great importance since it constitutes an ideal substrate material for GaN epitaxial layer growth~\cite{liu_l02}.
 Especially substrates of the 3C polytype promise good quality, single crystalline GaN films~\cite{takeuchi91,yamamoto04,ito04}.
 
-
+Due to the indirect band gap applications 
 Focus on ... key ... to high efficiency
-
-inverters and rectifieres based on SiC schottky 
+name applications related to properties: diodes, rectifiers, inverters, HDTV alternative microwave tubes
 
 high saturation drift velocity high-frequency ...
 Mechanical stability almost like diamond ...