deguchi

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index dc04f46..6b39840 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1913,7 +1913,7 @@
   month =        may,
   doi =          "10.1103/PhysRevLett.72.3578",
   publisher =    "American Physical Society",
-  notes =        "high c concentration in si, heterostructure, starined
+  notes =        "high c concentration in si, heterostructure, strained
                  si, dft",
 }
 
@@ -2453,6 +2453,24 @@
   notes =        "dislocations in diamond lattice",
 }
 
+@Article{deguchi92,
+  title =        "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
+                 Ion `Hot' Implantation",
+  author =       "Masahiro Deguchi and Makoto Kitabatake and Takashi
+                 Hirao and Naoki Arai and Tomio Izumi",
+  journal =      "Japanese Journal of Applied Physics",
+  volume =       "31",
+  number =       "Part 1, No. 2A",
+  pages =        "343--347",
+  numpages =     "4",
+  year =         "1992",
+  URL =          "http://jjap.ipap.jp/link?JJAP/31/343/",
+  doi =          "10.1143/JJAP.31.343",
+  publisher =    "The Japan Society of Applied Physics",
+  notes =        "c-c bonds in c implanted si, hot implantation
+                 efficiency, c-c hard to break by thermal annealing",
+}
+
 @Article{eichhorn99,
   author =       "F. Eichhorn and N. Schell and W. Matz and R.
                  K{\"{o}}gler",
@@ -2493,7 +2511,7 @@
   URL =          "http://link.aip.org/link/?JAP/91/1287/1",
   doi =          "10.1063/1.1428105",
   notes =        "3c-sic alignement to si host in ibs depending on
-                 temperature, might explain c int to c sub trafo",
+                 temperature, might explain c into c sub trafo",
 }
 
 @Article{lucas10,