vor bw-geloebnis

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index df26c5a..c4d1110 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -183,11 +183,11 @@ Investigations indicate that in the so-called step-controlled epitaxy, crystal g
 This growth mechanism does not require two-dimensional nucleation.
 Instead, crystal growth is governed by mass transport, i.e. the diffusion of reactants in a stagnant layer.
 In contrast, layers of the 3C polytype are formed on exactly oriented \hkl(0 0 0 1) 6H-SiC substrates by two-dimensional nucleation on terraces.
-{\color{red} Source of APB defects ...}
+These films show a high density of double positioning boundary (DPB) defects, which is a special type of twin boundary arising at the interface of regions that occupy one of the two possible orientations of the hexagonal stacking sequence, which are rotated by \unit[60]{$^{\circ}$} relative to each other, respectively.
 However, lateral 3C-SiC growth was also observed on low tilt angle off-axis substrates originating from intentionally induced dislocations \cite{powell91}.
 Additionally, 6H-SiC was observed on clean substrates even for a tilt angle as low as \unit[0.1]{$^{\circ}$} due to low surface mobilities that facilitate arriving molecules to reach surface steps.
 Thus, 3C nucleation is assumed as a result of migrating Si and C cointaining molecules interacting with surface disturbances by a yet unknown mechanism, in contrast to a model \cite{ueda90}, in which the competing 6H versus 3C growth depends on the density of surface steps.
-{\color{red} This can be employed to create 3C layers with reduced density of APB defects.}
+Combining the fact of a well defined 3C lateral growth direction, i.e. the tilt direction, and an intentionally induced dislocation enables the controlled growth of a 3C-SiC film mostly free of DPBs \cite{powell91}.
 
 Lower growth temperatures, a clean growth ambient, in situ control of the growth process, layer-by-layer deposition and the possibility to achieve dopant profiles within atomic dimensions due to the reduced diffusion at low growth temperatures reveal MBE as a promising technique to produce SiC epitaxial layers.
 Using alternating supply of the gas beams Si$_2$H$_6$ and C$_2$H$_2$ in GSMBE, 3C-SiC epilayers were obtained on 6H-SiC substrates at temperatures between \unit[850]{$^{\circ}$C} and \unit[1000]{$^{\circ}$C} \cite{yoshinobu92}.