added cover txt

diff --git a/posic/cover/pssc_cover.tex b/posic/cover/pssc_cover.tex
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+\documentclass[a4paper,11pt]{article}
+\usepackage[a4paper,textheight=636pt,textwidth=442pt,includeheadfoot]{geometry}
+\usepackage[english,german]{babel}
+\usepackage[latin1]{inputenc}
+\usepackage[T1]{fontenc}
+\usepackage{amsmath}
+\usepackage{ae}
+\usepackage{aecompl}
+\usepackage[dvips]{graphicx}
+\graphicspath{{./}}
+\usepackage{color}
+\usepackage{pstricks}
+\usepackage{pst-node}
+\usepackage{rotating}
+
+% miller
+\usepackage{miller}
+
+% smaller captions ...
+\usepackage[small,bf]{caption}
+
+% units
+\usepackage{units}
+
+% shortcuts
+\newcommand{\si}{Si$_{\text{i}}${}}
+\newcommand{\ci}{C$_{\text{i}}${}}
+\newcommand{\cs}{C$_{\text{s}}${}}
+\newcommand{\degc}[1]{\unit[#1]{$^{\circ}$C}{}}
+\newcommand{\degk}[1]{\unit[#1]{K}{}}
+\newcommand{\distn}[1]{\unit[#1]{nm}{}}
+\newcommand{\dista}[1]{\unit[#1]{\AA}{}}
+\newcommand{\perc}[1]{\unit[#1]{\%}{}}
+
+% hyphenation
+\hyphenation{}
+
+% english
+\selectlanguage{english}
+
+% author & title
+\author{F. Zirkelbach,
+ B. Stritzker,
+ K. Nordlund,
+ W. G. Schmidt,
+ E. Rauls,
+ J. K. N. Lindner
+}
+\title{First-principles and empirical potential simulation study of intrinsic
+       and carbon-related defects in silicon}
+
+\begin{document}
+
+\selectlanguage{english}
+
+\maketitle
+
+\begin{figure}[h!]
+\begin{minipage}{0.49\textwidth}
+\centering
+\includegraphics[width=0.95\textwidth]{pssc_cover_02}\\
+\end{minipage}
+\begin{minipage}{0.49\textwidth}
+\centering
+\includegraphics[width=0.95\textwidth]{pssc_cover_01}\\
+\end{minipage}
+\caption*{
+The cover page shows an initial C-Si \hkl[0 0 -1] dumbbell configuration in bulk Si (top left) emerging into a Si-Si \hkl[1 1 0] split interstitial configuration located next to a lattice site that is substitutionally occupied by a C atom (bottom right).
+First-principles total energy calculations describing the energetics of this transition (front left) reveal a diffusion barrier of no more than \unit[0.8]{eV} for the deviation out of the ground-state configuration.
+And indeed, in large systems consisting of six thousand C atoms incorporated into a Si host of a quater of a million atoms, these transitions can be observed with increasing temperature as can be seen within the shaded regions of the radial distribution function of Si-C bonds (rear right) obtained by large-scale empirical potential molecular dynamics simulations.
+These results suggest an important role of substitutionally incorporated C in the silicon carbide precipitation process at elevated temperatures or for from equilibrium.
+}
+\end{figure}
+
+\end{document}