notes = "cvd of 3c-sic on si, sic buffer layer",
}
+@Article{nagasawa06,
+ author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
+ title = "Reducing Planar Defects in 3{C}¿Si{C}",
+ journal = "Chemical Vapor Deposition",
+ volume = "12",
+ number = "8-9",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3862",
+ URL = "http://dx.doi.org/10.1002/cvde.200506466",
+ doi = "10.1002/cvde.200506466",
+ pages = "502--508",
+ keywords = "Defect structures, Epitaxy, Silicon carbide",
+ year = "2006",
+ notes = "cvd on si",
+}
+
@Article{nishino87,
author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
and Hiroyuki Matsunami",
notes = "sic data, advantages of 3c sic",
}
+@InProceedings{pribble02,
+ author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
+ R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
+ and J. J. Sumakeris and A. W. Saxler and J. W.
+ Milligan",
+ booktitle = "Microwave Symposium Digest, 2002 IEEE MTT-S
+ International",
+ title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
+ power amplifier design",
+ year = "2002",
+ month = "",
+ volume = "3",
+ number = "",
+ pages = "1819--1822",
+ doi = "10.1109/MWSYM.2002.1012216",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@InProceedings{temcamani01,
+ author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
+ Brylinski and P. Bannelier and B. Darges and J. P.
+ Prigent",
+ booktitle = "Microwave Symposium Digest, 2001 IEEE MTT-S
+ International",
+ title = "Silicon carbide {MESFET}s performances and application
+ in broadcast power amplifiers",
+ year = "2001",
+ month = "",
+ volume = "2",
+ number = "",
+ pages = "641--644",
+ doi = "10.1109/MWSYM.2001.966976",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@Article{pensl00,
+ author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
+ and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
+ Kimoto and Hiroyuki Matsunami",
+ title = "Traps at the Si{C}/Si{O2}-Interface",
+ journal = "MRS Online Proceedings Library",
+ volume = "640",
+ number = "",
+ pages = "",
+ year = "2000",
+ doi = "10.1557/PROC-640-H3.2",
+ URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
+ eprint = "http://journals.cambridge.org/article_S1946427400647061",
+}
+
@Article{bhatnagar93,
author = "M. Bhatnagar and B. J. Baliga",
journal = "Electron Devices, IEEE Transactions on",
}
@Misc{attenberger03,
- author = "Wilfried ATTENBERGER and Jörg LINDNER and Bernd
- STRITZKER",
- title = "A {METHOD} {FOR} {FORMING} {A} {LAYERED}
- {SEMICONDUCTOR} {STRUCTURE} {AND} {CORRESPONDING}
- {STRUCTURE}",
+ author = "Wilfried Attenberger and Jörg Lindner and Bernd
+ Stritzker",
+ title = "A {method} {for} {forming} {a} {layered}
+ {semiconductor} {structure} {and} {corresponding}
+ {structure}",
year = "2003",
month = apr,
day = "24",
As such, SiC will continue to play a major role in the production of future super-bright visible emitters.
Especially substrates of the 3C polytype promise good quality, single crystalline GaN films~\cite{takeuchi91,yamamoto04,ito04,haeberlen10}.
-The focus of SiC based applications, however, is in the area of solid state electronics experiencing revolutionary performance improvements enabled by its capabilities.
+The focus of SiC based applications, however, is in the area of solid state electronics experiencing revolutionary performance improvements enabled by its capabilities~\cite{wesch96,morkoc94,casady96,capano97,pensl93,park98,edgar92,sarro00}.
These devices include ultraviolet (UV) detectors, high power radio frequency (RF) amplifiers, rectifiers and switching transistors as well as microelectromechanical system (MEMS) applications.
For UV detectors the wide band gap is useful for realizing low photodiode dark currents as well as sensors that are blind to undesired near-infrared wavelengths produced by heat and solar radiation.
These photodiodes serve as excellent sensors applicable in the monitoring and control of turbine engine combustion.
The low neutron capture cross section and radiation hardness favors its use in detector applications.
The high breakdown field and carrier saturation velocity coupled with the high thermal conductivity allow SiC RF transistors to handle much higher power densities and frequencies in stable operation at high temperatures.
Smaller transistor sizes and less cooling requirements lead to a reduced overall size and cost of these systems.
-For instance, SiC based solid state transmitters hold great promise for High Definition Television (HDTV) broadcast stations abandoning the reliance on tube-based technology for high-power transmitters significantly reducing the size of such transmitters and long-term maintenance costs.
+For instance, SiC based solid state transmitters hold great promise for High Definition Television (HDTV) broadcast stations~\cite{temcamani01,pribble02} abandoning the reliance on tube-based technology for high-power transmitters significantly reducing the size of such transmitters and long-term maintenance costs.
The high breakdown field of SiC compared to Si allows the blocking voltage region of a device to be designed roughly 10 times thinner and 10 times heavier doped, resulting in a decrease of the blocking region resistance by a factor of 100 and a much faster switching behavior.
Thus, rectifier diodes and switching transistors with higher switching frequencies and much greater efficiencies can be realized and exploited in highly efficient power converters.
Therefor, SiC constitutes a promising candidate to become the key technology towards an extensive development and use of regenerative energies and electromobility.
Beside the mentioned electrical capabilities the mechanical stability, which is almost as hard as diamond, and chemical inertness almost suggest SiC to be used in MEMS designs.
-Among the different polytypes of SiC, the cubic phase shows a high electron mobility and the highest break down field as well as saturation drift velocity.
+Among the different polytypes of SiC, the cubic phase shows a high electron mobility and the highest break down field as well as saturation drift velocity~\cite{neudeck95,wesch96}.
In contrast to its hexagonal counterparts 3C-SiC exhibits isotropic mechanical and electronic properties.
-Additionally the smaller band gap is expected to be favorable concerning the interface state density in MOSFET devices fabricated on 3C-SiC.
+Additionally the smaller band gap is expected to be favorable concerning the interface state density in MOSFET devices fabricated on 3C-SiC~\cite{pensl00}.
Thus the cubic phase is most effective for highly efficient high-performance electronic devices.
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