joerg does not recognize 3d

diff --git a/posic/cover/pssc_cover.tex b/posic/cover/pssc_cover.tex
index ed17565..07a6aea 100644 (file)
--- a/posic/cover/pssc_cover.tex
+++ b/posic/cover/pssc_cover.tex
@@ -85,8 +85,8 @@
 \end{minipage}
 \caption*{
 The cover page shows an initial C-Si \hkl[0 0 -1] dumbbell configuration in bulk Si (top left) changing into a Si-Si \hkl[1 1 0] split interstitial configuration located next to a lattice site that is substitutionally occupied by a C atom (bottom right).
 \end{minipage}
 \caption*{
 The cover page shows an initial C-Si \hkl[0 0 -1] dumbbell configuration in bulk Si (top left) changing into a Si-Si \hkl[1 1 0] split interstitial configuration located next to a lattice site that is substitutionally occupied by a C atom (bottom right).

-First-principles total energy calculations describing the energetics of this transition (front left) reveal a diffusion barrier of no more than \unit[0.8]{eV} for the deviation out of the ground-state configuration.
-And indeed, in large systems consisting of six thousand C atoms incorporated into a Si host of a quater of a million of atoms, these transitions can be observed with increasing temperature as can be seen within the shaded regions of the radial distribution function of Si-C bonds (rear right) obtained by large-scale empirical potential molecular dynamics simulations.
+First-principles total energy calculations describing the energetics of this transition (bottom left) reveal a diffusion barrier of no more than \unit[0.8]{eV} for the deviation out of the ground-state configuration.
+And indeed, in large systems consisting of six thousand C atoms incorporated into a Si host of a quater of a million of atoms, these transitions can be observed with increasing temperature as can be seen within the shaded regions of the radial distribution function of Si-C bonds (top right) obtained by large-scale empirical potential molecular dynamics simulations.

 These results suggest an important role of substitutionally incorporated C in the silicon carbide precipitation process at elevated temperatures or far from equilibrium.
 }
 \end{figure}
 These results suggest an important role of substitutionally incorporated C in the silicon carbide precipitation process at elevated temperatures or far from equilibrium.
 }
 \end{figure}