fixes ...

diff --git a/nlsop/nlsop_helsinki.tex b/nlsop/nlsop_helsinki.tex
index d499dc1..c78ed16 100644 (file)
--- a/nlsop/nlsop_helsinki.tex
+++ b/nlsop/nlsop_helsinki.tex
@@ -309,6 +309,10 @@ Crystalline silicon target with a nearly constant carbon
 concentration at $10 \, at. \%$ in a $500 \, nm$ thick
 surface layer   
 \includegraphics[width=8cm]{multiple_impl_cp_e.eps}
 concentration at $10 \, at. \%$ in a $500 \, nm$ thick
 surface layer   
 \includegraphics[width=8cm]{multiple_impl_cp_e.eps}

+\begin{itemize}
+  \item Multiple energy ($180$-$10 \, keV$) $C^+$ $\rightarrow$ $Si$ implantation
+  \item $T_i=500 \, ^{\circ} \mathrm{C}$, to prevent amorphization
+\end{itemize}

 \end{slide}
 
 \begin{slide}
 \end{slide}
 
 \begin{slide}