added 2010 seminar and (hopefully defense) talk

diff --git a/posic/talks/seminar_2010.tex b/posic/talks/seminar_2010.tex
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+\pdfoutput=0
+\documentclass[landscape,semhelv]{seminar}
+
+\usepackage{verbatim}
+\usepackage[greek,german]{babel}
+\usepackage[latin1]{inputenc}
+\usepackage[T1]{fontenc}
+\usepackage{amsmath}
+\usepackage{latexsym}
+\usepackage{ae}
+
+\usepackage{calc}               % Simple computations with LaTeX variables
+\usepackage{caption}            % Improved captions
+\usepackage{fancybox}           % To have several backgrounds
+
+\usepackage{fancyhdr}           % Headers and footers definitions
+\usepackage{fancyvrb}           % Fancy verbatim environments
+\usepackage{pstricks}           % PSTricks with the standard color package
+
+\usepackage{pstricks}
+\usepackage{pst-node}
+
+%\usepackage{epic}
+%\usepackage{eepic}
+
+\usepackage{graphicx}
+\graphicspath{{../img/}}
+
+\usepackage[setpagesize=false]{hyperref}
+
+\usepackage{semcolor}
+\usepackage{semlayer}           % Seminar overlays
+\usepackage{slidesec}           % Seminar sections and list of slides
+
+\input{seminar.bug}             % Official bugs corrections
+\input{seminar.bg2}             % Unofficial bugs corrections
+
+\articlemag{1}
+
+\special{landscape}
+
+% font
+%\usepackage{cmbright}
+%\renewcommand{\familydefault}{\sfdefault}
+%\usepackage{mathptmx}
+
+\usepackage{upgreek}
+
+\begin{document}
+
+\extraslideheight{10in}
+\slideframe{none}
+
+\pagestyle{empty}
+
+% specify width and height
+\slidewidth 27.7cm 
+\slideheight 19.1cm 
+
+% shift it into visual area properly
+\def\slideleftmargin{3.3cm}
+\def\slidetopmargin{0.6cm}
+
+\newcommand{\ham}{\mathcal{H}}
+\newcommand{\pot}{\mathcal{V}}
+\newcommand{\foo}{\mathcal{U}}
+\newcommand{\vir}{\mathcal{W}}
+
+% itemize level ii
+\renewcommand\labelitemii{{\color{gray}$\bullet$}}
+
+% colors
+\newrgbcolor{si-yellow}{.6 .6 0}
+\newrgbcolor{hb}{0.75 0.77 0.89}
+\newrgbcolor{lbb}{0.75 0.8 0.88}
+\newrgbcolor{hlbb}{0.825 0.88 0.968}
+\newrgbcolor{lachs}{1.0 .93 .81}
+
+% topic
+
+\begin{slide}
+\begin{center}
+
+ \vspace{16pt}
+
+ {\LARGE\bf
+  Atomistic simulation study of the silicon carbide precipitation
+  in silicon
+ }
+
+ \vspace{48pt}
+
+ \textsc{F. Zirkelbach}
+
+ \vspace{48pt}
+
+ Lehrstuhlseminar
+
+ \vspace{08pt}
+
+ 17. Juni 2010
+
+\end{center}
+\end{slide}
+
+% motivation / properties / applications of silicon carbide
+\begin{slide}
+
+\small
+
+\begin{pspicture}(0,0)(13.5,5)
+
+
+
+ \psframe*[linecolor=hb](0,0)(13.5,5)
+
+ \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](5.5,1)(7,1)(7,3)(5.5,3)
+ \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](6.75,0.5)(8,2)(8,2)(6.75,3.5)
+
+ \rput[lt](0.2,4.6){\color{gray}PROPERTIES}
+
+ \rput[lt](0.5,4){wide band gap}
+ \rput[lt](0.5,3.5){high electric breakdown field}
+ \rput[lt](0.5,3){good electron mobility}
+ \rput[lt](0.5,2.5){high electron saturation drift velocity}
+ \rput[lt](0.5,2){high thermal conductivity}
+
+ \rput[lt](0.5,1.5){hard and mechanically stable}
+ \rput[lt](0.5,1){chemically inert}
+
+ \rput[lt](0.5,0.5){radiation hardness}
+
+ \rput[rt](13.3,4.6){\color{gray}APPLICATIONS}
+
+ \rput[rt](13,3.85){high-temperature, high power}
+ \rput[rt](13,3.5){and high-frequency}
+ \rput[rt](13,3.15){electronic and optoelectronic devices}
+
+ \rput[rt](13,2.35){material suitable for extreme conditions}
+ \rput[rt](13,2){microelectromechanical systems}
+ \rput[rt](13,1.65){abrasives, cutting tools, heating elements}
+
+ \rput[rt](13,0.85){first wall reactor material, detectors}
+ \rput[rt](13,0.5){and electronic devices for space}
+
+\end{pspicture}
+
+\begin{picture}(0,0)(-10,68)
+\includegraphics[width=2.6cm]{wide_band_gap.eps}
+\end{picture}
+\begin{picture}(0,0)(-295,-165)
+\includegraphics[width=3cm]{sic_led.eps}
+\end{picture}
+\begin{picture}(0,0)(-215,-165)
+\includegraphics[width=2.5cm]{6h-sic_3c-sic.eps}
+\end{picture}
+\begin{picture}(0,0)(-313,65)
+\includegraphics[width=2.2cm]{infineon_schottky.eps}
+\end{picture}
+\begin{picture}(0,0)(-220,65)
+\includegraphics[width=2.9cm]{sic_wechselrichter_ise.eps}
+\end{picture}
+
+\end{slide}
+
+% contents
+
+\begin{slide}
+
+{\large\bf
+ Outline
+}
+
+ \begin{itemize}
+  \item Fabrication of silicon carbide
+  \item Precipitation model
+  \item Utilized simulation techniques
+        \begin{itemize}
+         \item Molecular dynamics (MD) simulations
+         \item Density functional theory (DFT) calculations
+        \end{itemize}
+  \item Point defects in silicon
+  \item Precipitation simulations
+  \item Summary / Conclusion / Outlook
+ \end{itemize}
+
+\end{slide}
+
+% start of contents
+
+\begin{slide}
+
+ {\large\bf
+  Motivation
+ }
+ 
+ \vspace{4pt}
+
+ SiC - \emph{Born from the stars, perfected on earth.}
+
+ \vspace{4pt}
+
+ Herstellung d"unner SiC-Filme:
+ \begin{itemize}
+  \item modifizierter Lely-Prozess
+        \begin{itemize}
+         \item Impfkristall mit $T=2200 \, ^{\circ} \text{C}$
+         \item umgeben von polykristallinen SiC mit
+               $T=2400 \, ^{\circ} \text{C}$
+        \end{itemize}
+  \item CVD Homoepitaxie
+        \begin{itemize}
+         \item 'step controlled epitaxy' auf 6H-SiC-Substrat
+         \item C$_3$H$_8$/SiH$_4$/H$_2$ bei $1500 \, ^{\circ} \text{C}$
+         \item Winkel $\rightarrow$ 3C/6H/4H-SiC
+         \item hohe Qualit"at aber limitiert durch\\
+               Substratgr"o"se
+        \end{itemize}
+  \item CVD/MBE Heteroepitaxie von 3C-SiC auf Si
+        \begin{itemize}
+         \item 2 Schritte: Karbonisierung und Wachstum
+         \item $T=650-1050 \, ^{\circ} \text{C}$
+         \item Qualit"at/Gr"o"se noch nicht ausreichend
+        \end{itemize}
+ \end{itemize}
+
+ \begin{picture}(0,0)(-245,-50)
+  \includegraphics[width=5cm]{6h-sic_3c-sic.eps}
+ \end{picture}
+ \begin{picture}(0,0)(-240,-35)
+  \begin{minipage}{5cm}
+  {\scriptsize
+   NASA: 6H-SiC LED und 3C-SiC LED\\[-6pt]
+   nebeneinander auf 6H-SiC-Substrat
+  }
+  \end{minipage}
+ \end{picture}
+
+\end{slide}
+
+\end{document}