added: c 100 in si theory

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 8556c40..4828a7b 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -41,12 +41,17 @@
 }
 
 @Article{bean71,
-  author =       "A. R. Bean and R. C. Newman",
-  title =        "",
-  journal =      "J. Phys. Chem. Solids",
+  title =        "The solubility of carbon in pulled silicon crystals",
+  journal =      "Journal of Physics and Chemistry of Solids",
   volume =       "32",
-  pages =        "1211",
+  number =       "6",
+  pages =        "1211--1219",
   year =         "1971",
+  note =         "",
+  ISSN =         "0022-3697",
+  doi =          "DOI: 10.1016/S0022-3697(71)80179-8",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
+  author =       "A. R. Bean and R. C. Newman",
   notes =        "experimental solubility data of carbon in silicon",
 }
 
@@ -414,7 +419,7 @@
   doi =          "10.1103/PhysRevB.68.235205",
   publisher =    "American Physical Society",
   notes =        "formation energies of intrinisc point defects in
-                 silicon, si self interstitials",
+                 silicon, si self interstitials, free energy",
 }
 
 @Article{ma10,
@@ -2384,3 +2389,75 @@
   year =         "2004",
   notes =        "ab inito init, vibrational modes, c defect in si",
 }
+
+@Article{park02,
+  author =       "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
+                 T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
+                 J. E. Greene and S. G. Bishop",
+  collaboration = "",
+  title =        "Carbon incorporation pathways and lattice sites in
+                 Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
+                 molecular-beam epitaxy",
+  publisher =    "AIP",
+  year =         "2002",
+  journal =      "Journal of Applied Physics",
+  volume =       "91",
+  number =       "9",
+  pages =        "5716--5727",
+  URL =          "http://link.aip.org/link/?JAP/91/5716/1",
+  doi =          "10.1063/1.1465122",
+  notes =        "c substitutional incorporation pathway, dft and expt",
+}
+
+@Article{leary97,
+  title =        "Dynamic properties of interstitial carbon and
+                 carbon-carbon pair defects in silicon",
+  author =       "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
+                 Torres",
+  journal =      "Phys. Rev. B",
+  volume =       "55",
+  number =       "4",
+  pages =        "2188--2194",
+  numpages =     "6",
+  year =         "1997",
+  month =        jan,
+  doi =          "10.1103/PhysRevB.55.2188",
+  publisher =    "American Physical Society",
+  notes =        "ab initio c in si and di-carbon defect, no formation
+                 energies",
+}
+
+@Article{burnard93,
+  title =        "Interstitial carbon and the carbon-carbon pair in
+                 silicon: Semiempirical electronic-structure
+                 calculations",
+  author =       "Matthew J. Burnard and Gary G. DeLeo",
+  journal =      "Phys. Rev. B",
+  volume =       "47",
+  number =       "16",
+  pages =        "10217--10225",
+  numpages =     "8",
+  year =         "1993",
+  month =        apr,
+  doi =          "10.1103/PhysRevB.47.10217",
+  publisher =    "American Physical Society",
+  notes =        "semi empirical mndo, pm3 and mindo3 c in si and di
+                 carbon defect, formation energies",
+}
+
+@Article{kaxiras96,
+  title =        "Review of atomistic simulations of surface diffusion
+                 and growth on semiconductors",
+  journal =      "Computational Materials Science",
+  volume =       "6",
+  number =       "2",
+  pages =        "158--172",
+  year =         "1996",
+  note =         "Proceedings of the Workshop on Virtual Molecular Beam
+                 Epitaxy",
+  ISSN =         "0927-0256",
+  doi =          "DOI: 10.1016/0927-0256(96)00030-4",
+  URL =          "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
+  author =       "Efthimios Kaxiras",
+  notes =        "might contain c 100 db formation energy",
+}