more on epitaxial growth

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index edaa0a9..677539a 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -166,8 +166,14 @@ Thus, in most of the applied CVD and MBE processes, the SiC layer formation proc
 Cleaning of the substrate surface with HCl is required prior to carbonization.
 During carbonization the Si surface is chemically converted into a SiC film with a thickness of a few nm by exposing it to a flux of C atoms and concurrent heating up to temperatures about \unit[1400]{$^{\circ}$C}.
 In a next step, the epitaxial deposition of SiC is realized by an additional supply of Si atoms at similar temperatures.
+Low defect densities in the buffer layer are a prerequisite for obtaining good quality SiC layers during growth, although defect densities decrease with increasing distance of the SiC/Si interface \cite{}.
+Next to surface morphology defects such as pits and islands, the main defects in 3C-SiC heteroepitaxial layers are twins, stacking faults (SF) and antiphase boundaries (APB) \cite{}.
 
 
+off-axis?
+
+lower temps ... to limit thermal stress due to differing expansion coefficients ...
+
 \section{Ion beam synthesis of cubic silicon carbide}
 
 \section{Substoichiometric concentrations of carbon in crystalline silicon}
@@ -175,7 +181,7 @@ In a next step, the epitaxial deposition of SiC is realized by an additional sup
 \section{Assumed cubic silicon carbide conversion mechanisms}
 \label{section:assumed_prec}
 
-on surface ... md contraction along 110 ... kitabatake ... and ref in lindner
+on surface ... md contraction along 110 ... kitabatake ... and ref in lindner ... rheed from si to sic ...
 
 in ibs ... lindner and skorupa ...