projects
/
lectures
/
latex.git
/ commitdiff
commit
grep
author
committer
pickaxe
?
search:
re
summary
|
shortlog
|
log
|
commit
| commitdiff |
tree
raw
|
patch
|
inline
| side by side (parent:
76f9f19
)
(hopefully) final
author
hackbard
<hackbard>
Tue, 12 Sep 2006 13:19:04 +0000
(13:19 +0000)
committer
hackbard
<hackbard>
Tue, 12 Sep 2006 13:19:04 +0000
(13:19 +0000)
nlsop/poster/nlsop_ibmm2006_ver2.tex
patch
|
blob
|
history
diff --git
a/nlsop/poster/nlsop_ibmm2006_ver2.tex
b/nlsop/poster/nlsop_ibmm2006_ver2.tex
index
d03cc6a
..
bc6c1ac
100644
(file)
--- a/
nlsop/poster/nlsop_ibmm2006_ver2.tex
+++ b/
nlsop/poster/nlsop_ibmm2006_ver2.tex
@@
-6,6
+6,8
@@
\begin{document}
\begin{document}
+\hyphenation{pho-to-lu-mi-nescence}
+
% Fliessenden Hintergrund von RGB-Farbe 1. .98 .98 nach 1. .85 .85
% und wieder nach 1. .98 .98 (1. .85 .85 wird nach 0.1=10% des Hinter-
% grunds angenommen)
% Fliessenden Hintergrund von RGB-Farbe 1. .98 .98 nach 1. .85 .85
% und wieder nach 1. .98 .98 (1. .85 .85 wird nach 0.1=10% des Hinter-
% grunds angenommen)
@@
-19,7
+21,7
@@
\renewcommand{\columnfrac}{.31}
% header
\renewcommand{\columnfrac}{.31}
% header
-\vspace{-1cm}
+\vspace{-1
.5
cm}
\begin{header}
\begin{minipage} {.13\textwidth}
\includegraphics[height=11cm]{uni-logo.eps}
\begin{header}
\begin{minipage} {.13\textwidth}
\includegraphics[height=11cm]{uni-logo.eps}
@@
-41,7
+43,7
@@
\begin{poster}
\begin{poster}
-\vspace{-1cm}
+\vspace{-1
.1
cm}
\begin{pcolumn}
\begin{pbox}
\section*{Motivation}
\begin{pcolumn}
\begin{pbox}
\section*{Motivation}
@@
-49,36
+51,37
@@
Experimentally observerd seflorganisation process at high-dose carbon
implantations under certain implantation conditions.}
\begin{itemize}
Experimentally observerd seflorganisation process at high-dose carbon
implantations under certain implantation conditions.}
\begin{itemize}
- \item
Spherical and lamellar amorphous inclusions at the uppe
r
- a/c interface
+ \item
Regularly spaced, nanometric spherical and lamella
r
+
amorphous inclusions at the upper
a/c interface
\begin{center}
\includegraphics[width=20cm]{k393abild1_e.eps}
\end{center}
\begin{center}
\includegraphics[width=20cm]{k393abild1_e.eps}
\end{center}
- Cross
section TEM
image:\\
+ Cross
-section TEM bright-field
image:\\
$180 \, keV$ $C^+ \rightarrow Si$,
$180 \, keV$ $C^+ \rightarrow Si$,
- $T=150 \, ^{\circ} \mathrm{C}$,
+ $T
_i
=150 \, ^{\circ} \mathrm{C}$,
Dose: $4.3 \times 10^{17} \, cm^{-2}$\\
Dose: $4.3 \times 10^{17} \, cm^{-2}$\\
-
black/white: crystalline/amorphous material
\\
+
Amorphous inclusions appear white on darker backgrounds
\\
L: amorphous lamellae, S: spherical amorphous inclusions
\item Carbon accumulation in amorphous volumes
\begin{center}
\includegraphics[width=20cm]{eftem.eps}
\end{center}
L: amorphous lamellae, S: spherical amorphous inclusions
\item Carbon accumulation in amorphous volumes
\begin{center}
\includegraphics[width=20cm]{eftem.eps}
\end{center}
- Bright
field TEM and respective EFTEM image
:\\
+ Bright
-field TEM image and respective EFTEM $C$ map
:\\
$180 \, keV$ $C^+ \rightarrow Si$,
$180 \, keV$ $C^+ \rightarrow Si$,
- $T=200 \, ^{\circ} \mathrm{C}$,
+ $T
_i
=200 \, ^{\circ} \mathrm{C}$,
Dose: $4.3 \times 10^{17} \, cm^{-2}$\\
yellow/blue: high/low concentrations of carbon
\end{itemize}
{\bf
Dose: $4.3 \times 10^{17} \, cm^{-2}$\\
yellow/blue: high/low concentrations of carbon
\end{itemize}
{\bf
- Observed for a number of ion/target combinations for which the
+ Similarly ordered precipitate nanostructures also
+ observed for a number of ion/target combinations for which the
material undergoes drastic density change upon amorphisation.}\\
{\scriptsize
A. H. van Ommen, Nucl. Instr. and Meth. B 39 (1989) 194.\\
E. D. Specht et al., Nucl. Instr. and Meth. B 84 (1994) 323.\\
M. Ishimaru et al., Nucl. Instr. and Meth. B 166-167 (2000) 390.}
\end{pbox}
material undergoes drastic density change upon amorphisation.}\\
{\scriptsize
A. H. van Ommen, Nucl. Instr. and Meth. B 39 (1989) 194.\\
E. D. Specht et al., Nucl. Instr. and Meth. B 84 (1994) 323.\\
M. Ishimaru et al., Nucl. Instr. and Meth. B 166-167 (2000) 390.}
\end{pbox}
- \vspace{-1cm}
+ \vspace{-1
.5
cm}
\begin{pbox}
\section*{Model}
{\bf
\begin{pbox}
\section*{Model}
{\bf
@@
-89,23
+92,26
@@
\includegraphics[width=20cm]{modell_ng_e.eps}
\end{center}
\begin{itemize}
\includegraphics[width=20cm]{modell_ng_e.eps}
\end{center}
\begin{itemize}
-\item
s
upersaturation of $C$ in $c-Si$\\
- $\rightarrow$ {\bf
c
arbon induced} nucleation of spherical
+\item
S
upersaturation of $C$ in $c-Si$\\
+ $\rightarrow$ {\bf
C
arbon induced} nucleation of spherical
$SiC_x$-precipitates
$SiC_x$-precipitates
-\item
h
igh interfacial energy between $3C-SiC$ and $c-Si$\\
- $\rightarrow$ {\bf
a
mourphous} precipitates
+\item
H
igh interfacial energy between $3C-SiC$ and $c-Si$\\
+ $\rightarrow$ {\bf
A
mourphous} precipitates
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
- $\rightarrow$ {\bf
l
ateral strain} (black arrows)
-\item
i
mplantation range near surface\\
- $\rightarrow$ {\bf
r
alaxation} of {\bf vertical strain component}
-\item
r
eduction of the carbon supersaturation in $c-Si$\\
- $\rightarrow$ {\bf
c
arbon diffusion} into amorphous volumina
+ $\rightarrow$ {\bf
L
ateral strain} (black arrows)
+\item
I
mplantation range near surface\\
+ $\rightarrow$ {\bf
R
alaxation} of {\bf vertical strain component}
+\item
R
eduction of the carbon supersaturation in $c-Si$\\
+ $\rightarrow$ {\bf
C
arbon diffusion} into amorphous volumina
(white arrows)
(white arrows)
-\item remaining lateral strain\\
- $\rightarrow$ {\bf strain induced} lateral amorphisation
+\item Remaining lateral strain\\
+ $\rightarrow$ {\bf Strain enhanced} lateral amorphisation
+\item Absence of crystalline neighbours (structural information)\\
+ $\rightarrow$ {\bf Stabilisation} of amorphous inclusions
+ {\bf against recrystallisation}
\end{itemize}
\end{pbox}
\end{itemize}
\end{pbox}
- \vspace{-1cm}
+ \vspace{-1
.5
cm}
\begin{pbox}
\section*{Simulation}
\begin{minipage}[t]{0.5\textwidth}
\begin{pbox}
\section*{Simulation}
\begin{minipage}[t]{0.5\textwidth}
@@
-142,7
+148,8
@@
\section*{Simulation algorithm}
{\bf
The simulation algorithm consists of the following three parts looped
\section*{Simulation algorithm}
{\bf
The simulation algorithm consists of the following three parts looped
- $s$ times corresponding to a dose $D=s/(64\times64\times(3 \, nm)^2)$:}
+ $s$ times corresponding to a dose
+ $D=s/(64\times64\times(3 \, nm)^2)$:}
\subsection*{1. Amorphisation/Recrystallisation}
\begin{itemize}
\item random numbers distributed according to
\subsection*{1. Amorphisation/Recrystallisation}
\begin{itemize}
\item random numbers distributed according to
@@
-196,18
+203,21
@@
p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
\end{itemize}
\subsection*{3. Diffusion/Sputtering}
\begin{itemize}
\end{itemize}
\subsection*{3. Diffusion/Sputtering}
\begin{itemize}
- \item every $d_v$ steps transfer
$d_r$ of the
-
carbon atoms of
crystalline volumina to
+ \item every $d_v$ steps transfer
of a fraction $d_r$
+
of carbon atoms from
crystalline volumina to
an amorphous neighbour volume
an amorphous neighbour volume
- \item
do the sputter routine after $n$ steps
-
corresponding to $3 \, nm$ of substra
t
- removal
+ \item
remove $3 \, nm$ surface layer after $n$ loops,
+
shift remaining cells $3 \, nm$ up and inser
t
+ an empty, crystalline $3 \, nm$ bottom layer
\end{itemize}
\end{itemize}
+ \begin{picture}(0,0)(+40,-32)
+ \includegraphics[height=39.2cm]{loop-arrow.eps}
+ \end{picture}%
{\bf
Simulation parameters $d_v$, $d_r$ and $n$ control the
diffusion and sputtering process.}
\end{pbox}
{\bf
Simulation parameters $d_v$, $d_r$ and $n$ control the
diffusion and sputtering process.}
\end{pbox}
- \vspace{-
1
cm}
+ \vspace{-
0.27
cm}
\begin{pbox}
\section*{Comparison of experiment and simulation}
\begin{center}
\begin{pbox}
\section*{Comparison of experiment and simulation}
\begin{center}
@@
-217,11
+227,12
@@
p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
\includegraphics[width=25cm]{dosis_entwicklung_ng_e_2-2.eps}
\end{center}
Simulation parameters:\\
\includegraphics[width=25cm]{dosis_entwicklung_ng_e_2-2.eps}
\end{center}
Simulation parameters:\\
- $p_b=0.01$, $p_c=0.001$, $p_s=0.0001$, $d_r=0.05$, $d_v=1 \times 10^6$.
+ $p_b=0.01$, $p_c=0.001 \times (3 \, nm)^3$,
+ $p_s=0.0001 \times (3 \, nm)^5$, $d_r=0.05$, $d_v=1 \times 10^6$.
\\[0.7cm]{\bf Conclusion:}
\begin{itemize}
\\[0.7cm]{\bf Conclusion:}
\begin{itemize}
- \item
Essentially conforming formation and growth of the
- continuous amorphous layer
+ \item
Simulation in good agreement with experimentally observed
+
formation and growth of the
continuous amorphous layer
\item Lamellar precipitates and their evolution at the upper
a/c interface with increasing dose is reproduced
\end{itemize}
\item Lamellar precipitates and their evolution at the upper
a/c interface with increasing dose is reproduced
\end{itemize}
@@
-243,9
+254,11
@@
p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
implantation conditions between $8$ and
$10 \, at. \%$
\end{itemize}
implantation conditions between $8$ and
$10 \, at. \%$
\end{itemize}
- \end{minipage}
+ \end{minipage}
%
\begin{minipage}[t]{0.43\textwidth}
\includegraphics[height=15cm]{97_98_ng_e.eps}
\begin{minipage}[t]{0.43\textwidth}
\includegraphics[height=15cm]{97_98_ng_e.eps}
+ %\includegraphics[height=13cm]{gitter_e.eps}
+ %\includegraphics[height=15cm=]{test_foo.eps}
\begin{itemize}
\item Complementarily arranged and alternating sequence
of layers with high and low amount of amorphous
\begin{itemize}
\item Complementarily arranged and alternating sequence
of layers with high and low amount of amorphous
@@
-254,10
+267,9
@@
p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
\end{itemize}
\end{minipage}
\end{pbox}
\end{itemize}
\end{minipage}
\end{pbox}
- \vspace{-1cm}
+ \vspace{-1
.5
cm}
\begin{pbox}
\begin{pbox}
- \section*{Recipe:\\
- Thick films of ordered lamellar structure}
+ \section*{Recipe for thick films of ordered lamellae}
\begin{minipage}{0.33\textwidth}
{\bf Prerequisites:}\\
Crystalline silicon target with a nearly constant carbon
\begin{minipage}{0.33\textwidth}
{\bf Prerequisites:}\\
Crystalline silicon target with a nearly constant carbon
@@
-271,54
+283,64
@@
p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
\end{minipage}
{\bf Creation:}
\begin{itemize}
\end{minipage}
{\bf Creation:}
\begin{itemize}
- \item
m
ultiple energy ($180$-$10 \, keV$) $C^+$ $\rightarrow$
+ \item
M
ultiple energy ($180$-$10 \, keV$) $C^+$ $\rightarrow$
$Si$ implantation
$Si$ implantation
- \item $T=500 \, ^{\circ} \mathrm{C}$, to prevent amorphisation
+ \item $T
_i
=500 \, ^{\circ} \mathrm{C}$, to prevent amorphisation
\end{itemize}
\vspace{1cm}
\end{itemize}
\vspace{1cm}
- {\bf Stiring up:}\\[0.5cm]
-
2nd $2 \, MeV$ $C^+$ $\rightarrow$ $Si$ implant
ation step at
+ {\bf Stir
r
ing up:}\\[0.5cm]
+
$2 \, MeV$ $C^+$ $\rightarrow$ $Si$ irradi
ation step at
$150 \, ^{\circ} \mathrm{C}$
\begin{itemize}
\item This does not significantly change the carbon
concentration in the top $500 \, nm$
$150 \, ^{\circ} \mathrm{C}$
\begin{itemize}
\item This does not significantly change the carbon
concentration in the top $500 \, nm$
- \item Nearly constant energy loss in the affected depth region
+ \item Nearly constant nuclear energy loss in the top $700 \, nm$
+ region
\end{itemize}
\vspace{1cm}
{\bf Result:}
\vspace{0.7cm}
\begin{center}
\end{itemize}
\vspace{1cm}
{\bf Result:}
\vspace{0.7cm}
\begin{center}
- \includegraphics[width=25cm]{multiple_impl_e.eps}
+ \includegraphics[width=25cm]{multiple_impl_e
_ver2
.eps}
\end{center}
\begin{itemize}
\item Already ordered structures after $100 \times 10^6$ steps
corresponding to a dose of $D=2.7 \times 10^{17} cm^{-2}$
\item More defined structures with increasing dose
\end{itemize}
\end{center}
\begin{itemize}
\item Already ordered structures after $100 \times 10^6$ steps
corresponding to a dose of $D=2.7 \times 10^{17} cm^{-2}$
\item More defined structures with increasing dose
\end{itemize}
- {\bf\color{blue} Starting point for materials showing strong
\\
+ {\bf\color{blue} Starting point for materials showing strong
photoluminescence}\\
{\scriptsize Dihu Chen et al. Opt. Mater. 23 (2003) 65.}
\end{pbox}
photoluminescence}\\
{\scriptsize Dihu Chen et al. Opt. Mater. 23 (2003) 65.}
\end{pbox}
- \vspace{-1cm}
+ \vspace{-1
.5
cm}
\begin{pbox}
\section*{Conclusions}
\begin{itemize}
\begin{pbox}
\section*{Conclusions}
\begin{itemize}
- \item Observation of self
-
organised nanometric
+ \item Observation of selforganised nanometric
precipitates by ion irradiation
precipitates by ion irradiation
- \item Model proposed describing the se
o
forganisation
+ \item Model proposed describing the se
l
forganisation
process
process
- \item Model implemented to a Monte Carlo simulation code
- \item Simulation is able to reproduce experimental
- observations
+ \item Model implemented in a Monte Carlo simulation code
\item Modelling of the complete depth region affected
by the irradiation process
\item Modelling of the complete depth region affected
by the irradiation process
+ \item Simulation is able to reproduce entire amorphous
+ phase formation
\item Precipitation process gets traceable by simulation
\item Detailed structural/compositional information
available by simulation
\item Precipitation process gets traceable by simulation
\item Detailed structural/compositional information
available by simulation
- \item Recipe proposed for the formation of
broad
-
distributions
of lamellar structure
+ \item Recipe proposed for the formation of
thick films
+ of lamellar structure
\end{itemize}
\end{pbox}
\end{itemize}
\end{pbox}
+ \vspace{-1.5cm}
+ \begin{pbox}
+ \section*{Publications}
+ {\scriptsize
+ F. Zirkelbach, M. H"aberlen, J. K. N. Lindner,
+ B. Stritzker. Comp. Mater. Sci. 33 (2005) 310.\\
+ F. Zirkelbach, M. H"aberlen, J. K. N. Lindner,
+ B. Stritzker. Nucl. Instr. and Meth. B 242 (2006) 679.}
+ \end{pbox}
\end{pcolumn}
\end{poster}
\end{pcolumn}
\end{poster}