projects
/
lectures
/
latex.git
/ commitdiff
commit
grep
author
committer
pickaxe
?
search:
re
summary
|
shortlog
|
log
|
commit
| commitdiff |
tree
raw
|
patch
|
inline
| side by side (parent:
ffbb152
)
some fixes
author
hackbard
<hackbard>
Wed, 16 Aug 2006 11:05:55 +0000
(11:05 +0000)
committer
hackbard
<hackbard>
Wed, 16 Aug 2006 11:05:55 +0000
(11:05 +0000)
nlsop/poster/nlsop_ibmm2006_ver2.tex
patch
|
blob
|
history
diff --git
a/nlsop/poster/nlsop_ibmm2006_ver2.tex
b/nlsop/poster/nlsop_ibmm2006_ver2.tex
index
e1ed083
..
d03cc6a
100644
(file)
--- a/
nlsop/poster/nlsop_ibmm2006_ver2.tex
+++ b/
nlsop/poster/nlsop_ibmm2006_ver2.tex
@@
-120,7
+120,7
@@
\end{itemize}
\end{minipage}
\begin{minipage}[t]{0.5\textwidth}
\end{itemize}
\end{minipage}
\begin{minipage}[t]{0.5\textwidth}
- {\bf TRIM collsion statstics}
+ {\bf TRIM coll
i
sion statstics}
\begin{center}
\includegraphics[width=12cm]{trim_coll_e.eps}
\end{center}
\begin{center}
\includegraphics[width=12cm]{trim_coll_e.eps}
\end{center}
@@
-258,20
+258,25
@@
p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
\begin{pbox}
\section*{Recipe:\\
Thick films of ordered lamellar structure}
\begin{pbox}
\section*{Recipe:\\
Thick films of ordered lamellar structure}
- {\bf Prerequisites:}\\
+ \begin{minipage}{0.33\textwidth}
+ {\bf Prerequisites:}\\
Crystalline silicon target with a nearly constant carbon
concentration at $10 \, at. \%$ in a $500 \, nm$ thick
surface layer
Crystalline silicon target with a nearly constant carbon
concentration at $10 \, at. \%$ in a $500 \, nm$ thick
surface layer
- \begin{center}
- \includegraphics[width=18cm]{multiple_impl_cp_e.eps}
- \end{center}
+ \end{minipage}
+ \begin{minipage}{0.65\textwidth}
+ \begin{center}
+ \includegraphics[width=15cm]{multiple_impl_cp_e.eps}
+ \end{center}
+ \end{minipage}
{\bf Creation:}
\begin{itemize}
\item multiple energy ($180$-$10 \, keV$) $C^+$ $\rightarrow$
$Si$ implantation
\item $T=500 \, ^{\circ} \mathrm{C}$, to prevent amorphisation
\end{itemize}
{\bf Creation:}
\begin{itemize}
\item multiple energy ($180$-$10 \, keV$) $C^+$ $\rightarrow$
$Si$ implantation
\item $T=500 \, ^{\circ} \mathrm{C}$, to prevent amorphisation
\end{itemize}
- {\bf Stiring up:}\\
+ \vspace{1cm}
+ {\bf Stiring up:}\\[0.5cm]
2nd $2 \, MeV$ $C^+$ $\rightarrow$ $Si$ implantation step at
$150 \, ^{\circ} \mathrm{C}$
\begin{itemize}
2nd $2 \, MeV$ $C^+$ $\rightarrow$ $Si$ implantation step at
$150 \, ^{\circ} \mathrm{C}$
\begin{itemize}
@@
-279,7
+284,9
@@
p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
concentration in the top $500 \, nm$
\item Nearly constant energy loss in the affected depth region
\end{itemize}
concentration in the top $500 \, nm$
\item Nearly constant energy loss in the affected depth region
\end{itemize}
+ \vspace{1cm}
{\bf Result:}
{\bf Result:}
+ \vspace{0.7cm}
\begin{center}
\includegraphics[width=25cm]{multiple_impl_e.eps}
\end{center}
\begin{center}
\includegraphics[width=25cm]{multiple_impl_e.eps}
\end{center}
@@
-301,8
+308,10
@@
p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
\item Model proposed describing the seoforganisation
process
\item Model implemented to a Monte Carlo simulation code
\item Model proposed describing the seoforganisation
process
\item Model implemented to a Monte Carlo simulation code
- \item Simulation is able to reproduce experimenal
+ \item Simulation is able to reproduce experimen
t
al
observations
observations
+ \item Modelling of the complete depth region affected
+ by the irradiation process
\item Precipitation process gets traceable by simulation
\item Detailed structural/compositional information
available by simulation
\item Precipitation process gets traceable by simulation
\item Detailed structural/compositional information
available by simulation