hobler added
authorhackbard <hackbard@sage.physik.uni-augsburg.de>
Thu, 12 Aug 2010 10:50:56 +0000 (12:50 +0200)
committerhackbard <hackbard@sage.physik.uni-augsburg.de>
Thu, 12 Aug 2010 10:50:56 +0000 (12:50 +0200)
bibdb/bibdb.bib

index 74bed24..793ad39 100644 (file)
                  silicon",
 }
 
+@Article{hobler05,
+  title =        "Ab initio calculations of the interaction between
+                 native point defects in silicon",
+  journal =      "Materials Science and Engineering: B",
+  volume =       "124-125",
+  number =       "",
+  pages =        "368--371",
+  year =         "2005",
+  note =         "EMRS 2005, Symposium D - Materials Science and Device
+                 Issues for Future Technologies",
+  ISSN =         "0921-5107",
+  doi =          "DOI: 10.1016/j.mseb.2005.08.072",
+  URL =          "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
+  author =       "G. Hobler and G. Kresse",
+  notes =        "vasp intrinsic si defect interaction study, capture
+                 radius",
+}
+
 @Article{ma10,
   title =        "Ab initio study of self-diffusion in silicon over a
                  wide temperature range: Point defect states and