nearly able to start w ibs now ...

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 81c6a1d..5961c39 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -212,7 +212,9 @@ Although, in the first experiments, temperatures still above \unit[1100]{$^{\cir
 In the latter approach, as in GSMBE, excess Si atoms, which are controlled by the Si/C flux ratio, result in the formation of a Si adlayer and the formation of a non-stoichiometric, reconstructed surface superstructure, which influences the mobility of adatoms and, thus, has a decisive influence on the growth mode, polytype and crystallinity \cite{fissel95,fissel96,righi03}.
 Therefore, carefully controlling the Si/C ratio could be exploited to obtain definite heterostructures of different SiC polytypes providing the possibility for band gap engineering in SiC materials.
 
 In the latter approach, as in GSMBE, excess Si atoms, which are controlled by the Si/C flux ratio, result in the formation of a Si adlayer and the formation of a non-stoichiometric, reconstructed surface superstructure, which influences the mobility of adatoms and, thus, has a decisive influence on the growth mode, polytype and crystallinity \cite{fissel95,fissel96,righi03}.
 Therefore, carefully controlling the Si/C ratio could be exploited to obtain definite heterostructures of different SiC polytypes providing the possibility for band gap engineering in SiC materials.
 

-To summarize ... remaining obstacles are ... APB in 3C ... and micropipes in hexagonal SiC?
+To summarize, much progress has been made in SiC thin film growth during the last few years.
+However, the frequent occurence of defects such as dislocations, twins and double positioning boundaries limit the structural and electrical characteristics of large SiC films.
+Solving these issues remains a challenging problem necessary to drive SiC for potential applications in high-performance electronic device production \cite{wesch96}.

 
 \subsection{Ion beam synthesis of cubic silicon carbide}
 
 
 \subsection{Ion beam synthesis of cubic silicon carbide}