nearly finished poster adaption, now zzZzZ

diff --git a/posic/talks/helsinki_2008.tex b/posic/talks/helsinki_2008.tex
index 8a3174e..35aeade 100644 (file)
--- a/posic/talks/helsinki_2008.tex
+++ b/posic/talks/helsinki_2008.tex
@@ -202,7 +202,7 @@
 \begin{slide}
 
  {\large\bf
-  Motivation / Introduction
+  Supposed Si to 3C-SiC conversion
  }
 
  \small
@@ -358,33 +358,33 @@
 
  \begin{minipage}[t]{4.3cm}
  \underline{Tetrahedral}\\
- $E_f=3.41\, eV$\\
+ $E_f=3.41$ eV\\
  \includegraphics[width=3.8cm]{si_self_int_tetra_0.eps}
  \end{minipage}
  \begin{minipage}[t]{4.3cm}
  \underline{110 dumbbell}\\
- $E_f=4.39\, eV$\\
+ $E_f=4.39$ eV\\
  \includegraphics[width=3.8cm]{si_self_int_dumbbell_0.eps}
  \end{minipage}
  \begin{minipage}[t]{4.3cm}
  \underline{Hexagonal} \hspace{4pt}
  \href{../video/si_self_int_hexa.avi}{$\rhd$}\\
- $E_f^{\star}\approx4.48\, eV$ (unstable!)\\
+ $E_f^{\star}\approx4.48$ eV (unstable!)\\
  \includegraphics[width=3.8cm]{si_self_int_hexa_0.eps}
  \end{minipage}
 
  \underline{Random insertion}
 
  \begin{minipage}{4.3cm}
- $E_f=3.97\, eV$\\
+ $E_f=3.97$ eV\\
  \includegraphics[width=3.8cm]{si_self_int_rand_397_0.eps}
  \end{minipage}
  \begin{minipage}{4.3cm}
- $E_f=3.75\, eV$\\
+ $E_f=3.75$ eV\\
  \includegraphics[width=3.8cm]{si_self_int_rand_375_0.eps}
  \end{minipage}
  \begin{minipage}{4.3cm}
- $E_f=3.56\, eV$\\
+ $E_f=3.56$ eV\\
  \includegraphics[width=3.8cm]{si_self_int_rand_356_0.eps}
  \end{minipage}
 
@@ -400,18 +400,18 @@
 
  \begin{minipage}[t]{4.3cm}
  \underline{Tetrahedral}\\
- $E_f=2.67\, eV$\\
+ $E_f=2.67$ eV\\
  \includegraphics[width=3.8cm]{c_in_si_int_tetra_0.eps}
  \end{minipage}
  \begin{minipage}[t]{4.3cm}
  \underline{110 dumbbell}\\
- $E_f=1.76\, eV$\\
+ $E_f=1.76$ eV\\
  \includegraphics[width=3.8cm]{c_in_si_int_dumbbell_0.eps}
  \end{minipage}
  \begin{minipage}[t]{4.3cm}
  \underline{Hexagonal} \hspace{4pt}
  \href{../video/c_in_si_int_hexa.avi}{$\rhd$}\\
- $E_f^{\star}\approx5.6\, eV$ (unstable!)\\
+ $E_f^{\star}\approx5.6$ eV (unstable!)\\
  \includegraphics[width=3.8cm]{c_in_si_int_hexa_0.eps}
  \end{minipage}
 
@@ -420,27 +420,58 @@
  \footnotesize
 
 \begin{minipage}[t]{3.3cm}
-   $E_f=0.47\, eV$\\
+   $E_f=0.47$ eV\\
    \includegraphics[width=3.3cm]{c_in_si_int_001db_0.eps}
    \begin{picture}(0,0)(-15,-3)
-    001 dumbbell
+    100 dumbbell
    \end{picture}
 \end{minipage}
 \begin{minipage}[t]{3.3cm}
-   $E_f=1.62\, eV$\\
+   $E_f=1.62$ eV\\
    \includegraphics[width=3.2cm]{c_in_si_int_rand_162_0.eps}
 \end{minipage}
 \begin{minipage}[t]{3.3cm}
-   $E_f=2.39\, eV$\\
+   $E_f=2.39$ eV\\
    \includegraphics[width=3.1cm]{c_in_si_int_rand_239_0.eps}
 \end{minipage}
 \begin{minipage}[t]{3.0cm}
-   $E_f=3.41\, eV$\\
+   $E_f=3.41$ eV\\
    \includegraphics[width=3.3cm]{c_in_si_int_rand_341_0.eps}
 \end{minipage}
 
 \end{slide}
 
+\begin{slide}
+
+ {\large\bf
+  Results
+ } - <100> dumbbell configuration
+
+ \vspace{8pt}
+
+ \small
+
+ \begin{minipage}{4cm}
+ \begin{itemize}
+  \item $E_f=0.47$ eV
+  \item Very often observed
+  \item Most energetically\\
+        favorable configuration
+  \item Experimental\\
+        evidence [6]
+ \end{itemize}
+ \vspace{24pt}
+ {\tiny
+  [6] G. D. Watkins and K. L. Brower,\\
+      Phys. Rev. Lett. 36 (1976) 1329.
+ }
+ \end{minipage}
+ \begin{minipage}{8cm}
+ \includegraphics[width=9cm]{100-c-si-db_s.eps}
+ \end{minipage}
+
+\end{slide}
+
 \begin{slide}
 
  {\large\bf
@@ -501,20 +532,50 @@
   Results
  } - SiC precipitation runs
 
- \footnotesize
 
- \begin{minipage}[b]{6.9cm}
-  \includegraphics[width=6.3cm]{../plot/sic_prec_energy.ps}
-  \includegraphics[width=6.3cm]{../plot/sic_prec_temp.ps}
+ \includegraphics[width=6.3cm]{pc_si-c_c-c.eps}
+ \includegraphics[width=6.3cm]{pc_si-si.eps}
+
+ \begin{minipage}[t]{6.3cm}
+ \tiny
+    \begin{itemize}
+      \item C-C peak at 0.15 nm similar to next neighbour distance of graphite
+            or diamond\\
+            $\Rightarrow$ Formation of strong C-C bonds
+                          (almost only for high C concentrations)
+      \item Si-C peak at 0.19 nm similar to next neighbour distance in 3C-SiC
+      \item C-C peak at 0.31 nm equals C-C distance in 3C-SiC\\
+            (due to concatenated, differently oriented
+             <100> dumbbell interstitials)
+      \item Si-Si shows non-zero g(r) values around 0.31 nm like in 3C-SiC\\
+            and a decrease at regular distances\\
+            (no clear peak,
+             interval of enhanced g(r) corresponds to C-C peak width)
+    \end{itemize}
  \end{minipage}
- \begin{minipage}[b]{5.5cm}
-  \begin{itemize}
-   \item {\color{red} Total simulation volume}
-   \item {\color{green} Volume of minimal SiC precipitation}
-   \item {\color{blue} Volume of necessary amount of Si}
-  \end{itemize}
-  \vspace{40pt}
-  \includegraphics[width=6.3cm]{../plot/foo150.ps}
+ \begin{minipage}[t]{6.3cm}
+ \tiny
+   \begin{itemize}
+      \item Low C concentration (i.e. $V_1$):
+            The <100> dumbbell configuration
+            \begin{itemize}
+              \item is identified to stretch the Si-Si next neighbour distance
+                    to 0.3 nm
+              \item is identified to contribute to the Si-C peak at 0.19 nm
+              \item explains further C-Si peaks (dashed vertical lines)
+            \end{itemize}
+            $\Rightarrow$ C atoms are first elements arranged at distances
+                          expected for 3C-SiC\\
+            $\Rightarrow$ C atoms pull the Si atoms into the right
+                          configuration at a later stage
+      \item High C concentration (i.e. $V_2$ and $V_3$):
+            \begin{itemize}
+              \item High amount of damage introduced into the system
+              \item Short range order observed but almost no long range order
+            \end{itemize}
+            $\Rightarrow$ Start of amorphous SiC-like phase formation\\
+            $\Rightarrow$ Higher temperatures required for proper SiC formation
+    \end{itemize}
  \end{minipage}
 
 \end{slide}