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author
hackbard
<hackbard@sage.physik.uni-augsburg.de>
Mon, 27 Jun 2011 13:44:55 +0000
(15:44 +0200)
committer
hackbard
<hackbard@sage.physik.uni-augsburg.de>
Mon, 27 Jun 2011 13:44:55 +0000
(15:44 +0200)
bibdb/bibdb.bib
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diff --git
a/bibdb/bibdb.bib
b/bibdb/bibdb.bib
index
5fe3369
..
b9c9742
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(file)
--- a/
bibdb/bibdb.bib
+++ b/
bibdb/bibdb.bib
@@
-108,7
+108,7
@@
title = "Effect of Carbon on the Lattice Parameter of Silicon",
publisher = "AIP",
year = "1968",
title = "Effect of Carbon on the Lattice Parameter of Silicon",
publisher = "AIP",
year = "1968",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "39",
number = "9",
pages = "4365--4368",
volume = "39",
number = "9",
pages = "4365--4368",
@@
-1088,7
+1088,7
@@
silicon",
publisher = "AIP",
year = "1993",
silicon",
publisher = "AIP",
year = "1993",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "74",
number = "6",
pages = "3815--3820",
volume = "74",
number = "6",
pages = "3815--3820",
@@
-1228,7
+1228,7
@@
silicon",
publisher = "AIP",
year = "1984",
silicon",
publisher = "AIP",
year = "1984",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "45",
number = "3",
pages = "268--269",
volume = "45",
number = "3",
pages = "268--269",
@@
-1248,7
+1248,7
@@
Ge[sup + ] and {C}[sup + ] implantation",
publisher = "AIP",
year = "1990",
Ge[sup + ] and {C}[sup + ] implantation",
publisher = "AIP",
year = "1990",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "57",
number = "22",
pages = "2345--2347",
volume = "57",
number = "22",
pages = "2345--2347",
@@
-1267,7
+1267,7
@@
title = "Metastable SiGe{C} formation by solid phase epitaxy",
publisher = "AIP",
year = "1993",
title = "Metastable SiGe{C} formation by solid phase epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "63",
number = "20",
pages = "2786--2788",
volume = "63",
number = "20",
pages = "2786--2788",
@@
-1288,7
+1288,7
@@
strained layer superlattices",
publisher = "AIP",
year = "1992",
strained layer superlattices",
publisher = "AIP",
year = "1992",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "60",
number = "22",
pages = "2758--2760",
volume = "60",
number = "22",
pages = "2758--2760",
@@
-2150,7
+2150,7
@@
off-axis Si substrates",
publisher = "AIP",
year = "1987",
off-axis Si substrates",
publisher = "AIP",
year = "1987",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "51",
number = "11",
pages = "823--825",
volume = "51",
number = "11",
pages = "823--825",
@@
-2208,7
+2208,7
@@
vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1990",
vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1990",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "56",
number = "15",
pages = "1442--1444",
volume = "56",
number = "15",
pages = "1442--1444",
@@
-2229,7
+2229,7
@@
substrates",
publisher = "AIP",
year = "1988",
substrates",
publisher = "AIP",
year = "1988",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "64",
number = "5",
pages = "2672--2679",
volume = "64",
number = "5",
pages = "2672--2679",
@@
-2273,7
+2273,7
@@
substrates",
publisher = "AIP",
year = "1988",
substrates",
publisher = "AIP",
year = "1988",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "63",
number = "8",
pages = "2645--2650",
volume = "63",
number = "8",
pages = "2645--2650",
@@
-2295,7
+2295,7
@@
on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1991",
on low-tilt-angle vicinal (0001) 6{H}-Si{C} wafers",
publisher = "AIP",
year = "1991",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "59",
number = "3",
pages = "333--335",
volume = "59",
number = "3",
pages = "333--335",
@@
-2388,7
+2388,7
@@
level using surface superstructures",
publisher = "AIP",
year = "1996",
level using surface superstructures",
publisher = "AIP",
year = "1996",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "68",
number = "9",
pages = "1204--1206",
volume = "68",
number = "9",
pages = "1204--1206",
@@
-2540,7
+2540,7
@@
title = "High-temperature ion beam synthesis of cubic Si{C}",
publisher = "AIP",
year = "1990",
title = "High-temperature ion beam synthesis of cubic Si{C}",
publisher = "AIP",
year = "1990",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "67",
number = "6",
pages = "2908--2912",
volume = "67",
number = "6",
pages = "2908--2912",
@@
-2600,7
+2600,7
@@
implanted boron into silicon",
publisher = "AIP",
year = "1987",
implanted boron into silicon",
publisher = "AIP",
year = "1987",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "50",
number = "7",
pages = "416--418",
volume = "50",
number = "7",
pages = "416--418",
@@
-2621,7
+2621,7
@@
profiles",
publisher = "AIP",
year = "1990",
profiles",
publisher = "AIP",
year = "1990",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "68",
number = "12",
pages = "6191--6198",
volume = "68",
number = "12",
pages = "6191--6198",
@@
-2749,7
+2749,7
@@
Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
publisher = "AIP",
year = "1992",
Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloy system",
publisher = "AIP",
year = "1992",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "60",
number = "24",
pages = "3033--3035",
volume = "60",
number = "24",
pages = "3033--3035",
@@
-2838,7
+2838,7
@@
on Si(001) by adding small amounts of carbon",
publisher = "AIP",
year = "1994",
on Si(001) by adding small amounts of carbon",
publisher = "AIP",
year = "1994",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "64",
number = "25",
pages = "3440--3442",
volume = "64",
number = "25",
pages = "3440--3442",
@@
-2859,7
+2859,7
@@
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "60",
number = "3",
pages = "356--358",
volume = "60",
number = "3",
pages = "356--358",
@@
-3082,7
+3082,7
@@
by Low-Temperature Chemical Vapor Deposition",
author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
by Low-Temperature Chemical Vapor Deposition",
author = "Shuhei Yagi and Katsuya Abe and Takashi Okabayashi and
Yuichi Yoneyama and Akira Yamada and Makoto Konagai",
- journal = "Japanese J
ournal of Applied Physics
",
+ journal = "Japanese J
. Appl. Phys.
",
volume = "41",
number = "Part 1, No. 4B",
pages = "2472--2475",
volume = "41",
number = "Part 1, No. 4B",
pages = "2472--2475",
@@
-3118,7
+3118,7
@@
y] layers on Si(001)",
publisher = "AIP",
year = "1994",
y] layers on Si(001)",
publisher = "AIP",
year = "1994",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "65",
number = "26",
pages = "3356--3358",
volume = "65",
number = "26",
pages = "3356--3358",
@@
-3140,7
+3140,7
@@
y]{C}[sub y] on Si(001)",
publisher = "AIP",
year = "1996",
y]{C}[sub y] on Si(001)",
publisher = "AIP",
year = "1996",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "80",
number = "12",
pages = "6711--6715",
volume = "80",
number = "12",
pages = "6711--6715",
@@
-4415,7
+4415,7
@@
title = "Growth and Properties of beta-Si{C} Single Crystals",
publisher = "AIP",
year = "1966",
title = "Growth and Properties of beta-Si{C} Single Crystals",
publisher = "AIP",
year = "1966",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "37",
number = "1",
pages = "333--336",
volume = "37",
number = "1",
pages = "333--336",
@@
-4488,7
+4488,7
@@
improved external quantum efficiency",
publisher = "AIP",
year = "1982",
improved external quantum efficiency",
publisher = "AIP",
year = "1982",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "53",
number = "10",
pages = "6962--6967",
volume = "53",
number = "10",
pages = "6962--6967",
@@
-4582,7
+4582,7
@@
single crystals by physical vapor transport",
publisher = "AIP",
year = "1998",
single crystals by physical vapor transport",
publisher = "AIP",
year = "1998",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "72",
number = "13",
pages = "1632--1634",
volume = "72",
number = "13",
pages = "1632--1634",
@@
-4600,7
+4600,7
@@
title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
publisher = "AIP",
year = "1987",
title = "Antiphase boundaries in epitaxially grown beta-Si{C}",
publisher = "AIP",
year = "1987",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "50",
number = "4",
pages = "221--223",
volume = "50",
number = "4",
pages = "221--223",
@@
-4637,7
+4637,7
@@
title = "Step-flow epitaxial growth on two-domain surfaces",
publisher = "AIP",
year = "1996",
title = "Step-flow epitaxial growth on two-domain surfaces",
publisher = "AIP",
year = "1996",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "79",
number = "3",
pages = "1423--1434",
volume = "79",
number = "3",
pages = "1423--1434",
@@
-4655,7
+4655,7
@@
carbonization of silicon",
publisher = "AIP",
year = "1995",
carbonization of silicon",
publisher = "AIP",
year = "1995",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "78",
number = "3",
pages = "2070--2073",
volume = "78",
number = "3",
pages = "2070--2073",
@@
-4693,7
+4693,7
@@
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
molecular beam epitaxy",
publisher = "AIP",
year = "1992",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "60",
number = "7",
pages = "824--826",
volume = "60",
number = "7",
pages = "824--826",
@@
-4766,7
+4766,7
@@
molecular beam epitaxy",
publisher = "AIP",
year = "1994",
molecular beam epitaxy",
publisher = "AIP",
year = "1994",
- journal = "Appl
ied Physics Letters
",
+ journal = "Appl
. Phys. Lett.
",
volume = "65",
number = "22",
pages = "2851--2853",
volume = "65",
number = "22",
pages = "2851--2853",
@@
-4871,7
+4871,7
@@
title = "Effect of {H} on Si molecular-beam epitaxy",
publisher = "AIP",
year = "1993",
title = "Effect of {H} on Si molecular-beam epitaxy",
publisher = "AIP",
year = "1993",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "74",
number = "11",
pages = "6615--6618",
volume = "74",
number = "11",
pages = "6615--6618",
@@
-4929,7
+4929,7
@@
title = "Defects in Carbon-Implanted Silicon",
author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
Fukuoka and Haruo Saito",
title = "Defects in Carbon-Implanted Silicon",
author = "Bulat N. Mukashev and Alexey V. Spitsyn and Noboru
Fukuoka and Haruo Saito",
- journal = "Japanese J
ournal of Applied Physics
",
+ journal = "Japanese J
. Appl. Phys.
",
volume = "21",
number = "Part 1, No. 2",
pages = "399--400",
volume = "21",
number = "Part 1, No. 2",
pages = "399--400",
@@
-4967,7
+4967,7
@@
high-dose carbon ion implantation in silicon",
publisher = "AIP",
year = "1995",
high-dose carbon ion implantation in silicon",
publisher = "AIP",
year = "1995",
- journal = "J
ournal of Applied Physics
",
+ journal = "J
. Appl. Phys.
",
volume = "77",
number = "7",
pages = "2978--2984",
volume = "77",
number = "7",
pages = "2978--2984",