typo fixed
authorhackbard <hackbard>
Tue, 12 Sep 2006 15:41:18 +0000 (15:41 +0000)
committerhackbard <hackbard>
Tue, 12 Sep 2006 15:41:18 +0000 (15:41 +0000)
nlsop/poster/nlsop_ibmm2006_ver2.tex

index a7e6d0b..3303ecf 100644 (file)
@@ -97,7 +97,7 @@
       $\rightarrow$ {\bf Carbon induced} nucleation of spherical
       $SiC_x$-precipitates
 \item High interfacial energy between $3C-SiC$ and $c-Si$\\
-      $\rightarrow$ {\bf Amourphous} precipitates
+      $\rightarrow$ {\bf Amorphous} precipitates
 \item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
       $\rightarrow$ {\bf Lateral strain} (black arrows)
 \item Implantation range near surface\\