transition to phd stuff

diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex
index 1219e91..13c55e9 100644 (file)
--- a/posic/talks/mpi_app.tex
+++ b/posic/talks/mpi_app.tex
@@ -477,7 +477,8 @@ Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
 \begin{minipage}{12cm}
 \includegraphics[width=9cm]{../../nlsop/img/k393abild1_e_l.eps}\\
 {\scriptsize
-XTEM bright-field, \unit[180]{keV} C$^+ \rightarrow$ Si, \degc{150},
+XTEM bright-field, \unit[180]{keV} C$^+ \rightarrow$ Si,
+{\color{red}\underline{\degc{150}}},
 Dose: \unit[4.3 $\times 10^{17}$]{cm$^{-2}$}
 }
 \end{minipage}
@@ -577,12 +578,17 @@ p_{a \rightarrow c}(\vec r) = (1 - p_{c \rightarrow a}(\vec r)) \Big(1 - \frac{\
 
 \end{slide}
 
-\fi
-
 \begin{slide}
 
 \begin{minipage}{3.7cm}
-\headdiplom
+\begin{pspicture}(0,0)(0,0)
+\rput(1.7,0.2){\psframebox[fillstyle=gradient,gradbegin=red,gradend=white,gradlines=1000,gradangle=10,gradmidpoint=1,linestyle=none]{
+\begin{minipage}{3.7cm}
+\hfill
+\vspace{0.7cm}
+\end{minipage}
+}}
+\end{pspicture}
 {\large\bf
  Results
 }
@@ -596,7 +602,7 @@ Evolution of the \ldots
  \item continuous\\
        amorphous layer
  \item a/c interface
- \item lamella precipitates
+ \item lamellar precipitates
 \end{itemize}
 \ldots reproduced!\\[1.4cm]
 
@@ -648,7 +654,7 @@ Simulation is able to model the whole depth region\\[1.2cm]
  \item C accumulation in the amorphous phase / Origin of stress
 \end{itemize}
 
-\begin{picture}(0,0)(-265,-30)
+\begin{picture}(0,0)(-260,-50)
 \framebox{
 \begin{minipage}{3cm}
 \begin{center}
@@ -662,6 +668,60 @@ by simulation!
 }
 \end{picture}
 
+\end{slide}
+
+\fi
+
+\begin{slide}
+
+\headphd
+{\large\bf
+ Formation of epitaxial single crystalline 3C-SiC
+}
+
+\footnotesize
+
+\vspace{0.2cm}
+
+\includegraphics[width=7cm]{ibs_3c-sic.eps}\\
+
+\begin{itemize}
+ \item \underline{Implantation step 1}\\[0.1cm]
+        Almost stoichiometric dose | \unit[180]{keV} | \degc{500}\\
+        $\Rightarrow$ Epitaxial {\color{blue}3C-SiC} layer \&
+        {\color{blue}precipitates}
+ \item \underline{Implantation step 2}\\[0.1cm]
+        Little remaining dose | \unit[180]{keV} | \degc{250}\\
+        $\Rightarrow$
+        Destruction/Amorphization of precipitates at layer interface
+ \item \underline{Annealing}\\[0.1cm]
+       \unit[10]{h} at \degc{1250}\\
+       $\Rightarrow$ Homogeneous 3C-SiC layer with sharp interfaces
+\end{itemize}
+
+\begin{pspicture}(0,0)(0,0)
+\rput(10.0,4.5){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white,linecolor=blue,linestyle=solid]{
+\begin{minipage}{5.3cm}
+ \begin{center}
+ {\color{blue}
+  3C-SiC precipitation\\
+  not yet fully understood
+ }
+ \end{center}
+ \vspace*{0.1cm}
+ \renewcommand\labelitemi{$\Rightarrow$}
+ Details of the SiC precipitation
+ \begin{itemize}
+  \item significant technological progress\\
+        in SiC thin film formation
+  \item perspectives for processes relying\\
+        upon prevention of SiC precipitation
+ \end{itemize}
+\end{minipage}
+}}}
+\end{pspicture}
+
+
 \end{slide}
 
 
@@ -678,22 +738,6 @@ by simulation!
  Model displaying the formation of ordered lamellae
 }
 
-\framebox{
- \begin{minipage}{6.3cm}
- \begin{center}
- {\color{blue}
-  Precipitation mechanism not yet fully understood!
- }
- \renewcommand\labelitemi{$\Rightarrow$}
- \small
- \underline{Understanding the SiC precipitation}
- \begin{itemize}
-  \item significant technological progress in SiC thin film formation
-  \item perspectives for processes relying upon prevention of SiC precipitation
- \end{itemize}
- \end{center}
- \end{minipage}
-}
 
 \end{slide}