start of gsmbe 3c-sic homoeptitxy

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 43ce616..5ba9554 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -190,9 +190,12 @@ Thus, 3C nucleation is assumed as a result of migrating Si and C cointaining mol
 {\color{red} This can be employed to create 3C layers with reduced density of APB defects.}
 
 Lower growth temperatures, a clean growth ambient, in situ control of the growth process, layer-by-layer deposition and the possibility to achieve dopant profiles within atomic dimensions due to the reduced diffusion at low growth temperatures reveal MBE as a promising technique to produce SiC epitaxial layers.
-Using alternating supply of the gas beams Si$_2$H$_6$ and C$_2$H$_2$ in GSMBE, 3C-SiC epilayers were obtained on 6H-SiC substrates \cite{yoshinobu92}.
-On \hkl(000-1) substrates ...
-gas source ... 3C homoeptiaxy \cite{yoshinobu90}
+Using alternating supply of the gas beams Si$_2$H$_6$ and C$_2$H$_2$ in GSMBE, 3C-SiC epilayers were obtained on 6H-SiC substrates at temperatures between \unit[850]{$^{\circ}$C} and \unit[1000]{$^{\circ}$C} \cite{yoshinobu92}.
+On \hkl(000-1) substrates twinned \hkl(-1-1-1) oriented 3C-SiC domains are observed, which suggest a nucleation driven rather than step-flow growth mechanism.
+On \hkl(0-11-4) substrates, however, single crystalline \hkl(001) oriented 3C-SiC grows with the c axes of substrate and film being equal.
+The beneficial epitaxial relation of substrate and film limits the structural difference between the two polytypes in two out of six layers with respect to the stacking sequence along the c axis.
+Homoepitaxial growth of 3C-SiC by GSMBE was realized for the first time by atomic layer epitaxy (ALE) utilizing the change in the surface superstructure, which gives atomic level control in the growth process \cite{fuyuki89}.
+in more detail ... \cite{yoshinobu90}.
 3C on 3C homoepitaxy by ALE \cite{fuyuki89,fuyuki93,hara93}
 6H on 6H ... \cite{tanaka94}
 Problem of gas source ... strong adsorption and incorporation of atomic decomposited hydrogen of the gas phase reactants at low temperatures.