prealpha

diff --git a/posic/talks/emrs2012.tex b/posic/talks/emrs2012.tex
index b437eb1..ee03191 100644 (file)
--- a/posic/talks/emrs2012.tex
+++ b/posic/talks/emrs2012.tex
@@ -189,7 +189,7 @@ E\\
 \centerslidesfalse
 
 % skip for preparation
-\ifnum1=0
+%\ifnum1=0
 
 % intro
 
@@ -220,8 +220,7 @@ E\\
        $\Rightarrow$ Homogeneous 3C-SiC layer
 \end{itemize}
 \begin{center}
-{\color{blue}
-\framebox{
+\psframebox[linecolor=blue,linewidth=0.05cm]{
 \begin{minipage}{4.5cm}
  \color{black}
  \centering
@@ -229,7 +228,6 @@ E\\
  not yet fully understood
 \end{minipage}
 }
-}
 \end{center}
 \end{minipage}
 \begin{minipage}{5.0cm}
@@ -239,8 +237,10 @@ E\\
  XTEM: single crystalline 3C-SiC in Si\hkl(1 0 0)
 }
 \end{center}
-\end{minipage}\\[0.2cm]
+\end{minipage}\\[0.3cm]
 
+\psframebox[fillstyle=solid,fillcolor=hb]{
+\begin{minipage}{12.1cm}
 {\bf
  Outline
 }
@@ -251,6 +251,8 @@ E\\
  \item C and Si self-interstitial point defects in silicon
  \item Silicon carbide precipitation simulations
 \end{itemize}
+\end{minipage}
+}
 
 \end{slide}
 
@@ -804,14 +806,14 @@ $\rightarrow$
 \end{minipage}\\[0.1cm]
 $\Delta E=\unit[0.9]{eV}$ | Experimental values: \unit[0.70--0.87]{eV}\\
 $\Rightarrow$ {\color{blue}Migration mechanism identified!}\\
-Note: Change in orientation
+Note: Change in orientation\\
 \end{minipage}
 \begin{minipage}{5.4cm}
 \includegraphics[width=6.0cm]{00-1_0-10_vasp_s.ps}
-\end{minipage}\\[0.4cm]
+\end{minipage}\\[0.5cm]
 \begin{minipage}{6.8cm}
 {\bf\underline{Empirical potential}} $\quad$
-\hkl[0 0 -1] $\rightarrow$ \hkl[1 1 0] $\rightarrow$ \hkl[0 -1 0]\\
+\hkl[0 0 -1] $\rightarrow$ \hkl[1 1 0] $\rightarrow$ \hkl[0 -1 0]\\[-0.1cm]
 \begin{itemize}
  \item Transition involving \hkl[1 1 0] DB\\
        (instability of BC configuration)
@@ -819,10 +821,11 @@ Note: Change in orientation
  \item 2.4 -- 3.4 times higher than ab initio result
  \item After all: Change of the DB orientation
 \end{itemize}
-\vspace{0.1cm}
+\vspace{0.2cm}
 \begin{center}
 {\color{red}Drastically overestimated diffusion barrier}
 \end{center}
+\vspace{0.4cm}
 \end{minipage}
 \begin{minipage}{5.4cm}
 \includegraphics[width=6.0cm]{00-1_110_0-10_mig_albe.ps}
@@ -866,7 +869,7 @@ Note: Change in orientation
 \includegraphics[width=3.5cm]{comb_pos.eps}
 \end{minipage}
 
-\vspace{0.5cm}
+\vspace{0.7cm}
 
 {\bf\boldmath Combinations of \hkl<1 0 0>-type interstitials}\\[0.2cm]
 \begin{minipage}{6.1cm}
@@ -877,12 +880,13 @@ Note: Change in orientation
  \item Disappearance of attractive forces\\
        between two lowest separations.
 \end{itemize}
+\vspace{0.1cm}
 \begin{center}
 {\color{blue}\ci{} agglomeration / no C clustering}
 \end{center}
 \end{minipage}
 
-\begin{picture}(0,0)(-180,-40)
+\begin{picture}(0,0)(-180,-50)
 \begin{minipage}{6.0cm}
 \scriptsize\centering
 Interaction along \hkl[1 1 0]\\
@@ -1109,8 +1113,6 @@ Contribution of entropy to structural formation\\[0.1cm]
 
 \end{slide}
 
-\fi
-
 \begin{slide}
 
 \headphd
@@ -1233,7 +1235,7 @@ Limitations:
  \item Short range potential\\
        $\Rightarrow$ overestimated diffusion barrier
 \end{itemize}
-\vspace{0.6cm}
+\vspace{0.7cm}
 \underline{Increased temperatures}\\[0.2cm]
 \cs{} dominated structure\\
 \begin{pspicture}(0,0)(6.0,1.0)
@@ -1250,9 +1252,9 @@ Conclusions:
 \begin{itemize}
  \item Stretched coherent SiC structures\\
        $\Rightarrow$ \cs{} involved in precipitation mechanism
- \item High T $\leftrightarrow$ non-equilibrium IBS conditions
+ \item Reduction in strain by \si{} 
 \end{itemize}
-\vspace{0.3cm}
+\vspace{0.4cm}
 
 \end{minipage} 
 
@@ -1273,25 +1275,16 @@ Summary
  \item Empirical potential MD simulations on SiC prcipitation in Si
 \end{itemize}
 
-
-% conclusions
-\rput(6.5,-4.0){\psframebox[fillstyle=solid,fillcolor=white,linewidth=0.1cm]{
-\begin{minipage}{9cm}
 \vspace{0.2cm}
-\small
-\begin{center}
-{\color{gray}\bf Conclusions on SiC precipitation}\\[0.1cm]
-{\Huge$\lightning$} {\color{red}\ci{}} --- vs --- {\color{blue}\cs{}} {\Huge$\lightning$}\\
-\end{center}
+
+\psframebox[linecolor=hb,fillstyle=solid,fillcolor=hb]{
+\begin{minipage}{12cm}
+Conclusions on SiC precipitation $\qquad$
+{\Huge$\lightning$} {\color{red}\ci{}} --- vs --- {\color{blue}\cs{}} {\Huge$\lightning$}
+
 \begin{itemize}
-\item Stretched coherent SiC structures directly observed\\
-\psframebox[linecolor=blue,linewidth=0.05cm]{
-\begin{minipage}{7cm}
-\centering
-\cs{} involved in the precipitation mechanism\\
-\end{minipage}
-}
-\item Emission of \si{} serves several needs:
+\item \cs{} involved in the precipitation mechanism
+\item Role of the \si{}
       \begin{itemize}
        \item Vehicle to rearrange \cs --- [\cs{} \& \si{} $\leftrightarrow$ \ci]
        \item Building block for surrounding Si host \& further SiC
@@ -1299,21 +1292,17 @@ Summary
              \ldots Si/SiC interface\\
              \ldots within stretched coherent SiC structure
       \end{itemize}
-\item Explains annealing behavior of high/low T C implantations
-      \begin{itemize}
-       \item Low T: highly mobile {\color{red}\ci}
-       \item High T: stable configurations of {\color{blue}\cs}
-      \end{itemize}
-\psframebox[linecolor=blue,linewidth=0.05cm]{
-\begin{minipage}{7cm}
-\centering
-High T $\leftrightarrow$ IBS conditions far from equilibrium\\
-\end{minipage}
-}
 \end{itemize}
 \end{minipage}
+}
+
 \vspace{0.2cm}
-}}
+
+Further conclusions
+
+\begin{itemize}
+ \item High T $\leftrightarrow$ IBS conditions far from equilibrium
+\end{itemize}
 
 \end{slide}
 
@@ -1370,7 +1359,6 @@ High T $\leftrightarrow$ IBS conditions far from equilibrium\\
 
 
 
-
 \ifnum1=0
 
 \begin{slide}