final version -> profs now

diff --git a/posic/poster/emrs2008.tex b/posic/poster/emrs2008.tex
index 4a2ad21..1226f1b 100644 (file)
--- a/posic/poster/emrs2008.tex
+++ b/posic/poster/emrs2008.tex
@@ -78,8 +78,8 @@
     \section*{Motivation}
     {\bf Importance of the 3C-SiC precipitation process in silicon}
     \begin{itemize}
-      \item SiC is a promissing wide band gap material for high-temperature,
-            high-power. high-frequency semiconductor devices [1].
+      \item SiC is a promising wide band gap material for high-temperature,
+            high-power, high-frequency semiconductor devices [1].
       \item 3C-SiC epitaxial thin film formation on Si requires detailed
             knowledge of SiC nucleation.
       \item Fabrication of high carbon doped, strained pseudomorphic
@@ -298,7 +298,7 @@
 \includegraphics[width=8cm]{c_in_si_int_001db_0.eps}
 \end{minipage}\\[1cm]
 \begin{center}
-\includegraphics[width=24cm]{100-c-si-db_s.eps}
+\includegraphics[width=26cm]{100-c-si-db_s.eps}\\[0.35cm]
 \end{center}
 {\tiny
  [6] G. D. Watkins and K. L. Brower, Phys. Rev. Lett. 36 (1976) 1329.}
@@ -328,7 +328,7 @@
   \rput(7.5,5){\rnode{insert}{\psframebox[fillstyle=solid,fillcolor=lachs]{
    \parbox{15cm}{
    Insertion of 6000 carbon atoms at constant\\
-   temperature into:
+   temperature into $V_1$ or $V_2$ or $V_3$:
    \begin{itemize}
     \item Total simulation volume $V_1$
     \item Volume of minimal 3C-SiC precipitation $V_2$