small changes to sic ibs

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index cb3ae4a..a766650 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -2058,6 +2058,58 @@
                  ideas",
 }
 
                  ideas",
 }
 

+@Article{edelman76,
+  author =       "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
+                 and E. V. Lubopytova",
+  title =        "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
+                 by ion implantation",
+  publisher =    "Taylor \& Francis",
+  year =         "1976",
+  journal =      "Radiation Effects",
+  volume =       "29",
+  number =       "1",
+  pages =        "13--15",
+  URL =          "http://www.informaworld.com/10.1080/00337577608233477",
+  notes =        "3c-sic for different temperatures, amorphous, poly,
+                 single crystalline",
+}
+
+@Article{akimchenko80,
+  author =       "I. P. Akimchenko and K. V. Kisseleva and V. V. Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
+  title =        "Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions",
+  publisher =    "Taylor \& Francis",
+  year =         "1980",
+  journal =      "Radiation Effects",
+  volume =       "48",
+  number =       "1",
+  pages =        "7",
+  URL =          "http://www.informaworld.com/10.1080/00337578008209220",
+  notes =        "3c-sic nucleation by thermal spikes",
+}
+
+@Article{martin90,
+  author =       "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
+                 and M. Olivier and A. M. Papon and G. Rolland",
+  collaboration = "",
+  title =        "High-temperature ion beam synthesis of cubic Si{C}",
+  publisher =    "AIP",
+  year =         "1990",
+  journal =      "Journal of Applied Physics",
+  volume =       "67",
+  number =       "6",
+  pages =        "2908--2912",
+  keywords =     "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
+                 IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
+                 TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
+                 INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
+                 ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
+                 REACTIONS; MONOCRYSTALS",
+  URL =          "http://link.aip.org/link/?JAP/67/2908/1",
+  doi =          "10.1063/1.346092",
+  notes =        "triple energy implantation to overcome high annealing
+                 temepratures",
+}
+

 @Article{reeson87,
   author =       "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
                  J. Davis and G. E. Celler",
 @Article{reeson87,
   author =       "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
                  J. Davis and G. E. Celler",

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 8af85c0..77e41a2 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -220,10 +220,9 @@ Solving this issue remains a challenging problem necessary to drive SiC for pote
 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.
 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.

-In the following ...

 
 High-dose carbon implantation into \ac{c-Si} with subsequent or in situ annealing was found to result in SiC microcrystallites in Si \cite{borders71}.
 
 High-dose carbon implantation into \ac{c-Si} with subsequent or in situ annealing was found to result in SiC microcrystallites in Si \cite{borders71}.

-\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit{10}[at.\%] C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
+\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.

 
 Utilized and enhanced, 30 years devel ... (-32)
 By understanding some basci processes (32-36), \ac{IBS} nowadays has become a promising method to form thin SiC layers of high quality exclusively of the 3C polytype embedded in and epitactically aligned to the Si host featuring a sharp interface \cite{lindner99,lindner01,lindner02}.
 
 Utilized and enhanced, 30 years devel ... (-32)
 By understanding some basci processes (32-36), \ac{IBS} nowadays has become a promising method to form thin SiC layers of high quality exclusively of the 3C polytype embedded in and epitactically aligned to the Si host featuring a sharp interface \cite{lindner99,lindner01,lindner02}.