From: hackbard Date: Wed, 30 Apr 2008 17:24:24 +0000 (+0200) Subject: renamed bibdb! + fixes X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=commitdiff_plain;h=145b878c64a2642661db90afb09729fd163e65a9;hp=6c2f515e43db538b6bbdccb30e9f63aa8653c281 renamed bibdb! + fixes --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib new file mode 100644 index 0000000..5f4379d --- /dev/null +++ b/bibdb/bibdb.bib @@ -0,0 +1,269 @@ +% +% bibliography database +% + +% molecular dynamics: basics / potential + +@article{albe_sic_pot, + author = {Paul Erhart and Karsten Albe}, + title = {Analytical potential for atomistic simulations of silicon, carbon, + and silicon carbide}, + publisher = {APS}, + year = {2005}, + journal = {Phys. Rev. B}, + volume = {71}, + number = {3}, + eid = {035211}, + numpages = {14}, + pages = {035211}, + notes = {alble reparametrization, analytical bond oder potential (ABOP)}, + keywords = {silicon; elemental semiconductors; carbon; silicon compounds; + wide band gap semiconductors; elasticity; enthalpy; + point defects; crystallographic shear; atomic forces}, + url = {http://link.aps.org/abstract/PRB/v71/e035211}, + doi = {10.1103/PhysRevB.71.035211} +} + +@Article{albe2002, + title = {Modeling the metal-semiconductor interaction: + Analytical bond-order potential for platinum-carbon}, + author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.}, + journal = {Phys. Rev. B}, + volume = {65}, + number = {19}, + pages = {195124}, + numpages = {11}, + year = {2002}, + month = {May}, + doi = {10.1103/PhysRevB.65.195124}, + publisher = {American Physical Society}, + notes = {derivation of albe bond order formalism}, +} + +@Article{koster2002, + title = {Stress relaxation in $a-Si$ induced by ion bombardment}, + author = {M. Koster, H. M. Urbassek}, + journal = {Phys. Rev. B}, + volume = {62}, + number = {16}, + pages = {11219--11224}, + numpages = {5}, + year = {2000}, + month = {Oct}, + doi = {10.1103/PhysRevB.62.11219}, + publisher = {American Physical Society}, + notes = {virial derivation for 3-body tersoff potential} +} + +@Article{breadmore99, + title = {Direct simulation of ion-beam-induced stressing + and amorphization of silicon}, + author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen}, + journal = {Phys. Rev. B}, + volume = {60}, + number = {18}, + pages = {12610--12616}, + numpages = {6}, + year = {1999}, + month = {Nov}, + doi = {10.1103/PhysRevB.60.12610}, + publisher = {American Physical Society}, + notes = {virial derivation for 3-body tersoff potential} +} + +% molecular dynamics: applications + +@Article{batra87, + title = {Molecular-dynamics study of self-interstitials in silicon}, + author = {Inder P. Batra, Farid F. Abraham, S. Ciraci}, + journal = {Phys. Rev. B}, + volume = {35}, + number = {18}, + pages = {9552--9558}, + numpages = {6}, + year = {1987}, + month = {Jun}, + doi = {10.1103/PhysRevB.35.9552}, + publisher = {American Physical Society}, + notes = {selft-interstitials in silicon, stillinger-weber, + calculation of defect formation energy, defect interstitial types} +} + +@Article{schober89, + title = {Extended interstitials in silicon and germanium}, + author = {H. R. Schober}, + journal = {Phys. Rev. B}, + volume = {39}, + number = {17}, + pages = {13013--13015}, + numpages = {2}, + year = {1989}, + month = {Jun}, + doi = {10.1103/PhysRevB.39.13013}, + publisher = {American Physical Society}, + notes = {stillinger-weber silicon 110 stable and metastable dumbbell + configuration} +} + +% tight binding + +@Article{tang97, + title = {Intrinsic point defects in crystalline silicon: + Tight-binding molecular dynamics studiesof self-diffusion, + interstitial-vacancy recombination, and formation volumes}, + author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia}, + journal = {Phys. Rev. B}, + volume = {55}, + number = {21}, + pages = {14279--14289}, + numpages = {10}, + year = {1997}, + month = {Jun}, + doi = {10.1103/PhysRevB.55.14279}, + publisher = {American Physical Society}, + notes = {si self interstitial, diffusion, tbmd} +} + +@Article{tang97, + title = {Tight-binding theory of native point defects in silicon}, + author = {L. Colombo}, + journal = {Annu. Rev. Mater. Res.}, + volume = {32}, + pages = {271--295}, + numpages = {25}, + year = {2002}, + doi = {10.1146/annurev.matsci.32.111601.103036}, + publisher = {Annual Reviews}, + notes = {si self interstitial, tbmd, virial stress} +} + +% mixed + +@Article{gao2001, + title = {Ab initio and empirical-potential studies of defect properties + in $3C-SiC$ }, + author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales}, + journal = {Phys. Rev. B}, + volume = {64}, + number = {24}, + pages = {245208}, + numpages = {7}, + year = {2001}, + month = {Dec}, + doi = {10.1103/PhysRevB.64.245208}, + publisher = {American Physical Society}, + notes = {defects in 3c-sic} +} + +% ab initio + +@Article{leung99, + title = {Calculations of Silicon Self-Interstitial Defects}, + author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and + Itoh, S. and Ihara, S. }, + journal = {Phys. Rev. Lett.}, + volume = {83}, + number = {12}, + pages = {2351--2354}, + numpages = {3}, + year = {1999}, + month = {Sep}, + doi = {10.1103/PhysRevLett.83.2351}, + publisher = {American Physical Society}, + notes = {nice images of the defects} +} + +@Article{PhysRevB.50.7439, + title = {Identification of the migration path of interstitial carbon + in silicon}, + author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos}, + journal = {Phys. Rev. B}, + volume = {50}, + number = {11}, + pages = {7439--7442}, + numpages = {3}, + year = {1994}, + month = {Sep}, + doi = {10.1103/PhysRevB.50.7439}, + publisher = {American Physical Society}, + notes = {carbon interstitial migration path shown, 001 c-si dumbbell} +} + +% experimental stuff + +@Article{watkins76, + title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon}, + author = {Watkins, G. D. and Brower, K. L.}, + journal = {Phys. Rev. Lett.}, + volume = {36}, + number = {22}, + pages = {1329--1332}, + numpages = {3}, + year = {1976}, + month = {May}, + doi = {10.1103/PhysRevLett.36.1329}, + publisher = {American Physical Society}, + notes = {epr observations of 100 interstitial carbon atom in silicon} +} + +@Article{PhysRevB.42.5759, + title = {EPR identification of the single-acceptor state of interstitial carbon in silicon}, + author = {L. W. Song, G. D. Watkins}, + journal = {Phys. Rev. B}, + volume = {42}, + number = {9}, + pages = {5759--5764}, + numpages = {5}, + year = {1990}, + month = {Sep}, + doi = {10.1103/PhysRevB.42.5759}, + publisher = {American Physical Society} +} + +% my own publications + +@article{zirkelbach2007, + title = {Monte Carlo simulation study of a selforganisation process + leading to ordered precipitate structures}, + author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, + journal = {Nucl. instr. and Meth. B}, + volume = {257}, + number = {1--2}, + pages = {75--79}, + numpages = {5}, + year = {2007}, + month = {Apr}, + doi = {doi:10.1016/j.nimb.2006.12.118}, + publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} +} + +@article{zirkelbach2006, + title = {Monte-Carlo simulation study of the self-organization of nanometric + amorphous precipitates in regular arrays during ion irradiation}, + author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, + journal = {Nucl. instr. and Meth. B}, + volume = {242}, + number = {1--2}, + pages = {679--682}, + numpages = {4}, + year = {2006}, + month = {Jan}, + doi = {doi:10.1016/j.nimb.2005.08.162}, + publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} +} + +@article{zirkelbach2005, + title = {Modelling of a selforganization process leading to periodic arrays + of nanometric amorphous precipitates by ion irradiation}, + author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, + journal = {Comp. Mater. Sci.}, + volume = {33}, + number = {1--3}, + pages = {310--316}, + numpages = {7}, + year = {2005}, + month = {Apr}, + doi = {doi:10.1016/j.commatsci.2004.12.016}, + publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} +} + diff --git a/bibdb/bibdb.tex b/bibdb/bibdb.tex deleted file mode 100644 index f755d9a..0000000 --- a/bibdb/bibdb.tex +++ /dev/null @@ -1,269 +0,0 @@ -% -% bibliography database -% - -% molecular dynamics: basics / potential - -@article{albe_sic_pot, - author = {Paul Erhart and Karsten Albe}, - title = {Analytical potential for atomistic simulations of silicon, carbon, - and silicon carbide}, - publisher = {APS}, - year = {2005}, - journal = {Phys. Rev. B}, - volume = {71}, - number = {3}, - eid = {035211}, - numpages = {14}, - pages = {035211}, - notes = {alble reparametrization, analytical bond oder potential (ABOP)} - keywords = {silicon; elemental semiconductors; carbon; silicon compounds; - wide band gap semiconductors; elasticity; enthalpy; - point defects; crystallographic shear; atomic forces}, - url = {http://link.aps.org/abstract/PRB/v71/e035211}, - doi = {10.1103/PhysRevB.71.035211} -} - -@Article{albe2002, - title = {Modeling the metal-semiconductor interaction: - Analytical bond-order potential for platinum-carbon}, - author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.}, - journal = {Phys. Rev. B}, - volume = {65}, - number = {19}, - pages = {195124}, - numpages = {11}, - year = {2002}, - month = {May}, - doi = {10.1103/PhysRevB.65.195124}, - publisher = {American Physical Society} - notes = {derivation of albe bond order formalism} -} - -@Article{koster2002, - title = {Stress relaxation in $a-Si$ induced by ion bombardment}, - author = {M. Koster, H. M. Urbassek}, - journal = {Phys. Rev. B}, - volume = {62}, - number = {16}, - pages = {11219--11224}, - numpages = {5}, - year = {2000}, - month = {Oct}, - doi = {10.1103/PhysRevB.62.11219}, - publisher = {American Physical Society} - notes = {virial derivation for 3-body tersoff potential} -} - -@Article{breadmore99, - title = {Direct simulation of ion-beam-induced stressing - and amorphization of silicon}, - author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen}, - journal = {Phys. Rev. B}, - volume = {60}, - number = {18}, - pages = {12610--12616}, - numpages = {6}, - year = {1999}, - month = {Nov}, - doi = {10.1103/PhysRevB.60.12610}, - publisher = {American Physical Society} - notes = {virial derivation for 3-body tersoff potential} -} - -% molecular dynamics: applications - -@Article{batra87, - title = {Molecular-dynamics study of self-interstitials in silicon}, - author = {Inder P. Batra, Farid F. Abraham, S. Ciraci}, - journal = {Phys. Rev. B}, - volume = {35}, - number = {18}, - pages = {9552--9558}, - numpages = {6}, - year = {1987}, - month = {Jun}, - doi = {10.1103/PhysRevB.35.9552}, - publisher = {American Physical Society} - notes = {selft-interstitials in silicon, stillinger-weber, - calculation of defect formation energy, defect interstitial types} -} - -@Article{schober89, - title = {Extended interstitials in silicon and germanium}, - author = {H. R. Schober}, - journal = {Phys. Rev. B}, - volume = {39}, - number = {17}, - pages = {13013--13015}, - numpages = {2}, - year = {1989}, - month = {Jun}, - doi = {10.1103/PhysRevB.39.13013}, - publisher = {American Physical Society} - notes = {stillinger-weber silicon 110 stable and metastable dumbbell - configuration} -} - -% tight binding - -@Article{tang97, - title = {Intrinsic point defects in crystalline silicon: - Tight-binding molecular dynamics studiesof self-diffusion, - interstitial-vacancy recombination, and formation volumes}, - author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia}, - journal = {Phys. Rev. B}, - volume = {55}, - number = {21}, - pages = {14279--14289}, - numpages = {10}, - year = {1997}, - month = {Jun}, - doi = {10.1103/PhysRevB.55.14279}, - publisher = {American Physical Society} - notes = {si self interstitial, diffusion, tbmd} -} - -@Article{tang97, - title = {Tight-binding theory of native point defects in silicon} - author = {L. Colombo}, - journal = {Annu. Rev. Mater. Res.}, - volume = {32}, - pages = {271--295}, - numpages = {25}, - year = {2002}, - doi = {10.1146/annurev.matsci.32.111601.103036}, - publisher = {Annual Reviews} - notes = {si self interstitial, tbmd, virial stress} -} - -% mixed - -@Article{gao2001, - title = {Ab initio and empirical-potential studies of defect properties - in $3C-SiC$ }, - author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales}, - journal = {Phys. Rev. B}, - volume = {64}, - number = {24}, - pages = {245208}, - numpages = {7}, - year = {2001}, - month = {Dec}, - doi = {10.1103/PhysRevB.64.245208}, - publisher = {American Physical Society} - notes = {defects in 3c-sic} -} - -% ab initio - -@Article{leung99, - title = {Calculations of Silicon Self-Interstitial Defects}, - author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and - Itoh, S. and Ihara, S. }, - journal = {Phys. Rev. Lett.}, - volume = {83}, - number = {12}, - pages = {2351--2354}, - numpages = {3}, - year = {1999}, - month = {Sep}, - doi = {10.1103/PhysRevLett.83.2351}, - publisher = {American Physical Society} - notes = {nice images of the defects} -} - -@Article{PhysRevB.50.7439, - title = {Identification of the migration path of interstitial carbon - in silicon}, - author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos}, - journal = {Phys. Rev. B}, - volume = {50}, - number = {11}, - pages = {7439--7442}, - numpages = {3}, - year = {1994}, - month = {Sep}, - doi = {10.1103/PhysRevB.50.7439}, - publisher = {American Physical Society} - notes = {carbon interstitial migration path shown, 001 c-si dumbbell} -} - -% experimental stuff - -@Article{watkins76, - title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon}, - author = {Watkins, G. D. and Brower, K. L.}, - journal = {Phys. Rev. Lett.}, - volume = {36}, - number = {22}, - pages = {1329--1332}, - numpages = {3}, - year = {1976}, - month = {May}, - doi = {10.1103/PhysRevLett.36.1329}, - publisher = {American Physical Society} - notes = {epr observations of 100 interstitial carbon atom in silicon} -} - -@Article{PhysRevB.42.5759, - title = {EPR identification of the single-acceptor state of interstitial carbon in silicon}, - author = {L. W. Song, G. D. Watkins}, - journal = {Phys. Rev. B}, - volume = {42}, - number = {9}, - pages = {5759--5764}, - numpages = {5}, - year = {1990}, - month = {Sep}, - doi = {10.1103/PhysRevB.42.5759}, - publisher = {American Physical Society} -} - -% my own publications - -@article{zirkelbach2007, - title = {Monte Carlo simulation study of a selforganisation process - leading to ordered precipitate structures}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. instr. and Meth. B}, - volume = {257}, - number = {1--2}, - pages = {75--79}, - numpages = {5}, - year = {2007}, - month = {Apr}, - doi = {doi:10.1016/j.nimb.2006.12.118}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -@article{zirkelbach2006, - title = {Monte-Carlo simulation study of the self-organization of nanometric - amorphous precipitates in regular arrays during ion irradiation}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Nucl. instr. and Meth. B}, - volume = {242}, - number = {1--2}, - pages = {679--682}, - numpages = {4}, - year = {2006}, - month = {Jan}, - doi = {doi:10.1016/j.nimb.2005.08.162}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} - -@article{zirkelbach2005, - title = {Modelling of a selforganization process leading to periodic arrays - of nanometric amorphous precipitates by ion irradiation}, - author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker}, - journal = {Comp. Mater. Sci.}, - volume = {33}, - number = {1--3}, - pages = {310--316}, - numpages = {7}, - year = {2005}, - month = {Apr}, - doi = {doi:10.1016/j.commatsci.2004.12.016}, - publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS} -} -