From: hackbard Date: Thu, 10 Jun 2010 15:27:15 +0000 (+0200) Subject: added 2010 seminar and (hopefully defense) talk X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=commitdiff_plain;h=3d5577359a78be2b7cf1f2fa6ab2db587f749f8f added 2010 seminar and (hopefully defense) talk --- diff --git a/posic/talks/seminar_2010.tex b/posic/talks/seminar_2010.tex new file mode 100644 index 0000000..fd742bb --- /dev/null +++ b/posic/talks/seminar_2010.tex @@ -0,0 +1,241 @@ +\pdfoutput=0 +\documentclass[landscape,semhelv]{seminar} + +\usepackage{verbatim} +\usepackage[greek,german]{babel} +\usepackage[latin1]{inputenc} +\usepackage[T1]{fontenc} +\usepackage{amsmath} +\usepackage{latexsym} +\usepackage{ae} + +\usepackage{calc} % Simple computations with LaTeX variables +\usepackage{caption} % Improved captions +\usepackage{fancybox} % To have several backgrounds + +\usepackage{fancyhdr} % Headers and footers definitions +\usepackage{fancyvrb} % Fancy verbatim environments +\usepackage{pstricks} % PSTricks with the standard color package + +\usepackage{pstricks} +\usepackage{pst-node} + +%\usepackage{epic} +%\usepackage{eepic} + +\usepackage{graphicx} +\graphicspath{{../img/}} + +\usepackage[setpagesize=false]{hyperref} + +\usepackage{semcolor} +\usepackage{semlayer} % Seminar overlays +\usepackage{slidesec} % Seminar sections and list of slides + +\input{seminar.bug} % Official bugs corrections +\input{seminar.bg2} % Unofficial bugs corrections + +\articlemag{1} + +\special{landscape} + +% font +%\usepackage{cmbright} +%\renewcommand{\familydefault}{\sfdefault} +%\usepackage{mathptmx} + +\usepackage{upgreek} + +\begin{document} + +\extraslideheight{10in} +\slideframe{none} + +\pagestyle{empty} + +% specify width and height +\slidewidth 27.7cm +\slideheight 19.1cm + +% shift it into visual area properly +\def\slideleftmargin{3.3cm} +\def\slidetopmargin{0.6cm} + +\newcommand{\ham}{\mathcal{H}} +\newcommand{\pot}{\mathcal{V}} +\newcommand{\foo}{\mathcal{U}} +\newcommand{\vir}{\mathcal{W}} + +% itemize level ii +\renewcommand\labelitemii{{\color{gray}$\bullet$}} + +% colors +\newrgbcolor{si-yellow}{.6 .6 0} +\newrgbcolor{hb}{0.75 0.77 0.89} +\newrgbcolor{lbb}{0.75 0.8 0.88} +\newrgbcolor{hlbb}{0.825 0.88 0.968} +\newrgbcolor{lachs}{1.0 .93 .81} + +% topic + +\begin{slide} +\begin{center} + + \vspace{16pt} + + {\LARGE\bf + Atomistic simulation study of the silicon carbide precipitation + in silicon + } + + \vspace{48pt} + + \textsc{F. Zirkelbach} + + \vspace{48pt} + + Lehrstuhlseminar + + \vspace{08pt} + + 17. Juni 2010 + +\end{center} +\end{slide} + +% motivation / properties / applications of silicon carbide +\begin{slide} + +\small + +\begin{pspicture}(0,0)(13.5,5) + + + + \psframe*[linecolor=hb](0,0)(13.5,5) + + \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](5.5,1)(7,1)(7,3)(5.5,3) + \pspolygon[linecolor=hlbb,fillcolor=hlbb,fillstyle=solid](6.75,0.5)(8,2)(8,2)(6.75,3.5) + + \rput[lt](0.2,4.6){\color{gray}PROPERTIES} + + \rput[lt](0.5,4){wide band gap} + \rput[lt](0.5,3.5){high electric breakdown field} + \rput[lt](0.5,3){good electron mobility} + \rput[lt](0.5,2.5){high electron saturation drift velocity} + \rput[lt](0.5,2){high thermal conductivity} + + \rput[lt](0.5,1.5){hard and mechanically stable} + \rput[lt](0.5,1){chemically inert} + + \rput[lt](0.5,0.5){radiation hardness} + + \rput[rt](13.3,4.6){\color{gray}APPLICATIONS} + + \rput[rt](13,3.85){high-temperature, high power} + \rput[rt](13,3.5){and high-frequency} + \rput[rt](13,3.15){electronic and optoelectronic devices} + + \rput[rt](13,2.35){material suitable for extreme conditions} + \rput[rt](13,2){microelectromechanical systems} + \rput[rt](13,1.65){abrasives, cutting tools, heating elements} + + \rput[rt](13,0.85){first wall reactor material, detectors} + \rput[rt](13,0.5){and electronic devices for space} + +\end{pspicture} + +\begin{picture}(0,0)(-10,68) +\includegraphics[width=2.6cm]{wide_band_gap.eps} +\end{picture} +\begin{picture}(0,0)(-295,-165) +\includegraphics[width=3cm]{sic_led.eps} +\end{picture} +\begin{picture}(0,0)(-215,-165) +\includegraphics[width=2.5cm]{6h-sic_3c-sic.eps} +\end{picture} +\begin{picture}(0,0)(-313,65) +\includegraphics[width=2.2cm]{infineon_schottky.eps} +\end{picture} +\begin{picture}(0,0)(-220,65) +\includegraphics[width=2.9cm]{sic_wechselrichter_ise.eps} +\end{picture} + +\end{slide} + +% contents + +\begin{slide} + +{\large\bf + Outline +} + + \begin{itemize} + \item Fabrication of silicon carbide + \item Precipitation model + \item Utilized simulation techniques + \begin{itemize} + \item Molecular dynamics (MD) simulations + \item Density functional theory (DFT) calculations + \end{itemize} + \item Point defects in silicon + \item Precipitation simulations + \item Summary / Conclusion / Outlook + \end{itemize} + +\end{slide} + +% start of contents + +\begin{slide} + + {\large\bf + Motivation + } + + \vspace{4pt} + + SiC - \emph{Born from the stars, perfected on earth.} + + \vspace{4pt} + + Herstellung d"unner SiC-Filme: + \begin{itemize} + \item modifizierter Lely-Prozess + \begin{itemize} + \item Impfkristall mit $T=2200 \, ^{\circ} \text{C}$ + \item umgeben von polykristallinen SiC mit + $T=2400 \, ^{\circ} \text{C}$ + \end{itemize} + \item CVD Homoepitaxie + \begin{itemize} + \item 'step controlled epitaxy' auf 6H-SiC-Substrat + \item C$_3$H$_8$/SiH$_4$/H$_2$ bei $1500 \, ^{\circ} \text{C}$ + \item Winkel $\rightarrow$ 3C/6H/4H-SiC + \item hohe Qualit"at aber limitiert durch\\ + Substratgr"o"se + \end{itemize} + \item CVD/MBE Heteroepitaxie von 3C-SiC auf Si + \begin{itemize} + \item 2 Schritte: Karbonisierung und Wachstum + \item $T=650-1050 \, ^{\circ} \text{C}$ + \item Qualit"at/Gr"o"se noch nicht ausreichend + \end{itemize} + \end{itemize} + + \begin{picture}(0,0)(-245,-50) + \includegraphics[width=5cm]{6h-sic_3c-sic.eps} + \end{picture} + \begin{picture}(0,0)(-240,-35) + \begin{minipage}{5cm} + {\scriptsize + NASA: 6H-SiC LED und 3C-SiC LED\\[-6pt] + nebeneinander auf 6H-SiC-Substrat + } + \end{minipage} + \end{picture} + +\end{slide} + +\end{document}