From: hackbard Date: Wed, 10 Feb 2010 17:06:52 +0000 (+0100) Subject: new bib entries (ted, c in si) X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=commitdiff_plain;h=5db92af8eef3fb2d4d4e7c1b37c1add5751efcac new bib entries (ted, c in si) --- diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib index 9b13f7e..81d9a5e 100644 --- a/bibdb/bibdb.bib +++ b/bibdb/bibdb.bib @@ -40,6 +40,16 @@ notes = "derivation of albe bond order formalism", } +@Article{bean71, + author = "A. R. Bean and R. C. Newman", + title = "", + journal = "J. Phys. Chem. Solids", + volume = "32", + pages = "1211", + year = "1971", + notes = "experimental solubility data of carbon in silicon", +} + @Article{capano97, author = "M. A. Capano and R. J. Trew", title = "Silicon Carbide Electronic Materials and Devices", @@ -390,7 +400,8 @@ month = sep, doi = "10.1103/PhysRevLett.83.2351", publisher = "American Physical Society", - notes = "nice images of the defects, si defect overview + refs", + notes = "nice images of the defects, si defect overview + + refs", } @Article{capaz94, @@ -411,18 +422,20 @@ } @Article{dal_pino93, - title = {Ab initio investigation of carbon-related defects in silicon}, - author = {Dal Pino, A. and Rappe, Andrew M. and Joannopoulos, J. D.}, - journal = {Phys. Rev. B}, - volume = {47}, - number = {19}, - pages = {12554--12557}, - numpages = {3}, - year = {1993}, - month = {May}, - doi = {10.1103/PhysRevB.47.12554}, - publisher = {American Physical Society}, - notes = {c interstitials in crystalline silicon} + title = "Ab initio investigation of carbon-related defects in + silicon", + author = "A. Dal Pino and Andrew M. Rappe and J. D. + Joannopoulos", + journal = "Phys. Rev. B", + volume = "47", + number = "19", + pages = "12554--12557", + numpages = "3", + year = "1993", + month = may, + doi = "10.1103/PhysRevB.47.12554", + publisher = "American Physical Society", + notes = "c interstitials in crystalline silicon", } @Article{car84, @@ -476,6 +489,21 @@ notes = "mc md, strain compensation in si ge by c insertion", } +@Article{bean70, + title = "Low temperature electron irradiation of silicon + containing carbon", + journal = "Solid State Communications", + volume = "8", + number = "3", + pages = "175--177", + year = "1970", + note = "", + ISSN = "0038-1098", + doi = "DOI: 10.1016/0038-1098(70)90074-8", + URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081", + author = "A. R. Bean and R. C. Newman", +} + @Article{watkins76, title = "{EPR} Observation of the Isolated Interstitial Carbon Atom in Silicon", @@ -506,6 +534,21 @@ month = sep, doi = "10.1103/PhysRevB.42.5759", publisher = "American Physical Society", + notes = "carbon diffusion in silicon", +} + +@Article{tipping87, + author = "A K Tipping and R C Newman", + title = "The diffusion coefficient of interstitial carbon in + silicon", + journal = "Semiconductor Science and Technology", + volume = "2", + number = "5", + pages = "315--317", + URL = "http://stacks.iop.org/0268-1242/2/315", + year = "1987", + notes = "diffusion coefficient of carbon interstitials in + silicon", } @Article{strane96, @@ -805,17 +848,17 @@ } @Article{tersoff90, - title = {Carbon defects and defect reactions in silicon}, - author = {Tersoff, J. }, - journal = {Phys. Rev. Lett.}, - volume = {64}, - number = {15}, - pages = {1757--1760}, - numpages = {3}, - year = {1990}, - month = {Apr}, - doi = {10.1103/PhysRevLett.64.1757}, - publisher = {American Physical Society} + title = "Carbon defects and defect reactions in silicon", + author = "J. Tersoff", + journal = "Phys. Rev. Lett.", + volume = "64", + number = "15", + pages = "1757--1760", + numpages = "3", + year = "1990", + month = apr, + doi = "10.1103/PhysRevLett.64.1757", + publisher = "American Physical Society", } @Article{fahey89, @@ -1129,6 +1172,25 @@ and J. M. Poate", } +@Article{stolk97, + author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and + D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and + M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T. + E. Haynes", + collaboration = "", + title = "Physical mechanisms of transient enhanced dopant + diffusion in ion-implanted silicon", + publisher = "AIP", + year = "1997", + journal = "Journal of Applied Physics", + volume = "81", + number = "9", + pages = "6031--6050", + URL = "http://link.aip.org/link/?JAP/81/6031/1", + doi = "10.1063/1.364452", + notes = "ted, transient enhanced diffusion, c silicon trap" +} + @Article{powell94, author = "A. R. Powell and F. K. LeGoues and S. S. Iyer", collaboration = "", @@ -1302,7 +1364,7 @@ notes = "simulation using promising tersoff reparametrization", } -@Article{PhysRevB.52.15150, +@Article{tang95, title = "Atomistic simulation of thermomechanical properties of \beta{}-Si{C}", author = "Meijie Tang and Sidney Yip", @@ -1317,3 +1379,43 @@ publisher = "American Physical Society", notes = "promising tersoff reparametrization", } + +@Article{barkema96, + title = "Event-Based Relaxation of Continuous Disordered + Systems", + author = "G. T. Barkema and Normand Mousseau", + journal = "Phys. Rev. Lett.", + volume = "77", + number = "21", + pages = "4358--4361", + numpages = "3", + year = "1996", + month = nov, + doi = "10.1103/PhysRevLett.77.4358", + publisher = "American Physical Society", + notes = "activation relaxation technique, art, speed up slow + dynamic mds", +} + +@Article{cances09, + author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K. + Minoukadeh and F. Willaime", + collaboration = "", + title = "Some improvements of the activation-relaxation + technique method for finding transition pathways on + potential energy surfaces", + publisher = "AIP", + year = "2009", + journal = "The Journal of Chemical Physics", + volume = "130", + number = "11", + eid = "114711", + numpages = "6", + pages = "114711", + keywords = "eigenvalues and eigenfunctions; iron; potential energy + surfaces; vacancies (crystal)", + URL = "http://link.aip.org/link/?JCP/130/114711/1", + doi = "10.1063/1.3088532", + notes = "improvements to art, refs for methods to find + transition pathways", +}