From: hackbard Date: Thu, 22 Apr 2010 15:33:04 +0000 (+0200) Subject: more low c high t findings ... X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=commitdiff_plain;h=6656c2c662edd5c3726e34dc0acb9de9d0841276 more low c high t findings ... --- diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex index 648e5aa..5c3cb30 100644 --- a/posic/thesis/md.tex +++ b/posic/thesis/md.tex @@ -325,6 +325,16 @@ Conclusions drawn from investigations of the quality evolution correlate well wi \caption[C-C and Si-Si radial distribution for the low concentration simulations at different elevated temperatures.]{C-C and Si-Si radial distribution for the low concentration simulations at different elevated temperatures. All structures are cooled down to $20\,^{\circ}\mathrm{C}$.} \label{fig:md:tot_c-c_si-si} \end{figure} +The formation of substitutional carbon also affects the Si-Si radial distribution displayed in the lower part of figure \ref{fig:md:tot_c-c_si-si}. +Investigating the atomic strcuture indeed shows that the peak arising at 0.325 nm with increasing temperature is due to two Si atoms directly bound to a C substitutional. +It corresponds to the distance of second next neighboured Si atoms along a \hkl<1 1 0>-equivalent direction with substitutional C inbetween. +Since the expected distance of these Si pairs in 3C-SiC is 0.308 nm the existing SiC structures embedded in the c-Si host are stretched. + +In the upper part of figure \ref{fig:md:tot_c-c_si-si} the C-C radial distribution is shown. +With increasing temperature a decrease of the amount of next neighboured C pairs can be observed. +This is a promising result gained by the high temperature simulations since the breaking of these diomand and graphite like bonds is mandatory for the formation of 3C-SiC. + +TODO: mark 100-100 sub-100 and sub-sub C-C distances in plot ... then explain! \subsection{Constructed 3C-SiC precipitate in crystalline silicon}