From: hackbard <hackbard>
Date: Fri, 30 Apr 2004 19:03:44 +0000 (+0000)
Subject: emrs submitted version!
X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=commitdiff_plain;h=85afbd10e17d2468c69aea662f1a1c1e9f808291

emrs submitted version!
---

diff --git a/nlsop/nlsop_emrs_2004.tex b/nlsop/nlsop_emrs_2004.tex
index 7156e97..31f27de 100644
--- a/nlsop/nlsop_emrs_2004.tex
+++ b/nlsop/nlsop_emrs_2004.tex
@@ -153,7 +153,7 @@ A simple model explaining the selforganization process of lamellar, amorphous pr
  \item XTEM image of a $Si$ sample implanted with $180 \, keV \, C^+$ ions at a dose of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \,^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions are marked by $L$ and $S$.
  \item Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing dose (see text).
  \item Nuclear and electronic stopping powers and concentration profile of $180 \, keV \, C^+$ ions implanted in $Si$ calculated by TRIM.
- \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantationinto silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white.
+ \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantation into silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white.
  \item Two identical simulation runs with diffusion switched off (left) and on (right).
  \item Two identical simulation runs with different diffusion rates $d_r$. All other parameters are as in Figure 5(b).
  \item Four simulation runs with different simulation parameter $p_s$. All other parameters are as in Figure 5(b).