From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Tue, 12 Apr 2011 15:35:42 +0000 (+0200)
Subject: some small changes
X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=commitdiff_plain;h=9f6e7316fb4233586a256546083b9964e16a8e71

some small changes
---

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 2a48361..56041df 100644
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -4090,3 +4090,25 @@
   notes =        "convergence k point supercell size, vacancy in
                  silicon",
 }
+
+@Article{serre95,
+  author =       "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
+                 Romano-Rodr\'{\i}guez and J. R. Morante and R.
+                 K{\"{o}}gler and W. Skorupa",
+  collaboration = "",
+  title =        "Spectroscopic characterization of phases formed by
+                 high-dose carbon ion implantation in silicon",
+  publisher =    "AIP",
+  year =         "1995",
+  journal =      "Journal of Applied Physics",
+  volume =       "77",
+  number =       "7",
+  pages =        "2978--2984",
+  keywords =     "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
+                 FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
+                 PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
+                 DEPENDENCE; PRECIPITATES; ANNEALING",
+  URL =          "http://link.aip.org/link/?JAP/77/2978/1",
+  doi =          "10.1063/1.358714",
+}
+
diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 146e724..ca9aded 100644
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -246,7 +246,8 @@ Since no amorphous or polycrystalline regions have been identified, twinning is
 Further studies revealed the possibility to form buried layers of SiC by IBS at moderate substrate and anneal temperatures \cite{lindner95}.
 Different doses of C ions with an energy of \unit[180]{keV} were implanted at \unit[330-440]{$^{\circ}$C} and annealed at \unit[1200]{$^{\circ}$C} or \unit[1250]{$^{\circ}$C} for \unit[5-10]{h}.
 For a critical dose, which was found to depend on the orientation of the Si substrate, corresponding to a \unit[50]{at.\%} C concentration at the implantation peak, C atoms get redistributed appropriately resulting in the formation of a stoichiometric buried layer of SiC exhibiting a well-defined interface to the Si host matrix.
-Redistribution is hindered for overstoichiometric doses ... and higher implantation energies resulting in randomly distributed SiC precipitates ...
+Redistribution of the excess C in case of overstoichiometric implantations is not observed.
+Higher implantation energies were found to result in layers of variable composition exhibiting randomly distributed SiC precipitates.
 
 high t -> direct SiC formation -> no redistribution ...