From: hackbard Date: Wed, 14 May 2008 17:22:03 +0000 (+0200) Subject: safety checkin ... X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=commitdiff_plain;h=c14e26a07978bfdb0e10d2891168e8428f73e14b safety checkin ... --- diff --git a/posic/poster/emrs2008.tex b/posic/poster/emrs2008.tex index 15e72a6..22e457b 100644 --- a/posic/poster/emrs2008.tex +++ b/posic/poster/emrs2008.tex @@ -315,18 +315,18 @@ \begin{itemize} \item Initial configuration: $31\times31\times31$ unit cells Si \item Periodic boundary conditions - \item $T=450\, ^{\circ}C$ - \item Equilibration of $E_{kin}$ and $E_{pot}$ for $600\, fs$ + \item $T=450\, ^{\circ}\textrm{C}$, $p=0\text{ bar}$ + \item Equilibration of $E_{kin}$ and $E_{pot}$ for 600 fs \end{itemize} }}}} \rput(7.5,5){\rnode{insert}{\psframebox[fillstyle=solid,fillcolor=red]{ \parbox{15cm}{ - Insertion of $6000$ carbon atoms at constant\\ + Insertion of 6000 carbon atoms at constant\\ temperature into: \begin{itemize} - \item Total simulation volume $V_1$ {\pnode{in1}} - \item Volume of minimal SiC precipitation $V_2$ {\pnode{in2}} - \item Volume of necessary amount of Si $V_3$ {\pnode{in3}} + \item Total simulation volume $V_1$ + \item Volume of minimal 3C-SiC precipitation $V_2$ + \item Volume of necessary amount of Si $V_3$ \end{itemize} }}}} \rput(7.5,1){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=cyan]{ @@ -338,18 +338,63 @@ \psframe[fillstyle=solid,fillcolor=white](16,2.6)(26,12.6) \psframe[fillstyle=solid,fillcolor=lightgray](18,4.6)(24,10.6) \psframe[fillstyle=solid,fillcolor=gray](18.5,5.1)(23.5,10.1) - \rput(17,8.4){\pnode{ins1}} - \rput(18.15,6.88){\pnode{ins2}} + \rput(9,5.4){\pnode{in1}} + \rput(15,5.4){\pnode{in-1}} + \rput(17,7.2){\pnode{ins1}} + \rput(14,4.2){\pnode{in2}} + \rput(15,4.2){\pnode{in-2}} + \rput(18.25,6.88){\pnode{ins2}} + \rput(12,3.0){\pnode{in3}} + \rput(15,3.0){\pnode{in-3}} \rput(21,7.6){\pnode{ins3}} - \ncline[linewidth=0.08]{->}{in1}{ins1} - \ncline[linewidth=0.08]{->}{in2}{ins2} - \ncline[linewidth=0.08]{->}{in3}{ins3} + \ncline[linewidth=0.05]{->}{in-1}{ins1} + \ncline[linewidth=0.05]{->}{in-2}{ins2} + \ncline[linewidth=0.05]{->}{in-3}{ins3} + \ncline[linewidth=0.05]{-}{in1}{in-1} + \ncline[linewidth=0.05]{-}{in2}{in-2} + \ncline[linewidth=0.05]{-}{in3}{in-3} \end{pspicture} } - {\bf Results:}\\ - Foobar hier .. - + {\bf Results and interpretation:}\\ + Si-C and C-C pair correlation function:\\ + \includegraphics[width=24cm]{pc_si-c_c-c.eps} + \begin{center} + {\tiny + {\bf Dashed vertical lines:} Further calculated C-Si distances + in the $<100>$ C-Si dumbbell interstitial configuration}\\[0.5cm] + \end{center} + Si-Si pair correlation function:\\ + \includegraphics[width=24cm]{pc_si-si.eps}\\ + {\small + \begin{itemize} + \item C-C peak at 0.15 nm similar to next neighbour distance of graphite + or diamond\\ + $\Rightarrow$ Formation of strong C-C bonds + (almost only for high C concentrations) + \item C-C peak at 0.31 nm equals C-C distance in 3C-SiC\\ + (due to concatenated, differently oriented + $<100>$ dumbbell interstitials) + \item Si-Si shows non-zero g(r) values around 0.31 nm + and decrease at regular distances\\ + (no clear peak, + interval of enhanced g(r) corresponds to C-C peak width) + \item Si-C peak at 0.19 nm similar to next neighbour distance in 3C-SiC + \item Low C concentration (i.e. $V_1$): The $<100>$ dumbbell configuration + \begin{itemize} + \item is identified to stretch the Si-Si next neighbour distance + to 0.3 nm + \item is identified to contribute to the Si-C peak at 0.19 nm + \item explains further C-Si peaks (dashed vertical lines) + \end{itemize} + \item High C concentration (i.e. $V_2$ and $V_3$): + \begin{itemize} + \item High amount of damage introduced into the system + \item Short range order observed but almost no long range order + \end{itemize} + \end{itemize} + } + \end{pbox} \begin{pbox} \section*{Conclusions}