From: hackbard <hackbard@hackdaworld.org>
Date: Wed, 30 May 2012 08:04:09 +0000 (+0200)
Subject: changed to bibitem list
X-Git-Url: https://hackdaworld.org/gitweb/?p=lectures%2Flatex.git;a=commitdiff_plain;h=f0ac0a8402afa79a6a06b9841db95bcfaf670303

changed to bibitem list
---

diff --git a/posic/publications/emrs2012.tex b/posic/publications/emrs2012.tex
index 2627c46..92d93be 100644
--- a/posic/publications/emrs2012.tex
+++ b/posic/publications/emrs2012.tex
@@ -333,8 +333,321 @@ Rearrangement of stable C$_{\text{s}}$ is enabled by excess Si$_{\text{i}}$, whi
 We gratefully acknowledge financial support by the Bayerische Forschungsstiftung (Grant No. DPA-61/05) and the Deutsche Forschungsgemeinschaft (Grant No. DFG SCHM 1361/11).
 \end{acknowledgement}
 
-\bibliography{../../bibdb/bibdb}{}
-\bibliographystyle{pss.bst}
+%\bibliography{../../bibdb/bibdb}{}
+%\bibliographystyle{pss.bst}
 
-\end{document}
 
+\providecommand{\WileyBibTextsc}{}
+\let\textsc\WileyBibTextsc
+\providecommand{\othercit}{}
+\providecommand{\jr}[1]{#1}
+\providecommand{\etal}{~et~al.}
+
+
+\begin{thebibliography}{[10]}
+
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+  gap semiconductors\fi,
+ \jr{J. Mater. Res.} \textbf{7}(January), 235 (1992).
+
+
+\bibitem{capano97}% article
+ \textsc{M.\,A. Capano} and  \textsc{R.\,J. Trew}\iffalse Silicon carbide
+  electronic materials and devices\fi,
+ \jr{MRS Bull.} \textbf{22}(3), 19--22 (1997).
+
+
+\othercit
+\bibitem{park98}% book
+ \textsc{Y.\,S. Park},
+Si{C} Materials and Devices (Academic Press, San Diego, 1998).
+
+
+\bibitem{borders71}% article
+ \textsc{J.\,A. Borders},  \textsc{S.\,T. Picraux},  and
+  \textsc{W.~Beezhold}\iffalse {FORMATION} {OF} si{C} {IN} {SILICON} {BY} {ION}
+  {IMPLANTATION}\fi,
+ \jr{Appl. Phys. Lett.} \textbf{18}(11), 509--511 (1971).
+
+
+\bibitem{lindner01}% article
+ \textsc{J.\,K.\,N. Lindner}\iffalse Ion beam synthesis of buried si{C} layers
+  in silicon: Basic physical processes\fi,
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+
+
+\othercit
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+ \textsc{P.~Werner},  \textsc{R.~K{\"{o}}gler},  \textsc{W.~Skorupa},  and
+  \textsc{D.~Eichler},
+{TEM} investigation of {C}-si defects in carbon implanted silicon,
+ in: Proceedings of the 11th International Conference on Ion Implantation
+  Technology.,  (June 1996),  pp.\,675--678.
+
+
+\bibitem{lindner99_2}% article
+ \textsc{J.\,K.\,N. Lindner} and  \textsc{B.~Stritzker}\iffalse Mechanisms in
+  the ion beam synthesis of si{C} layers in silicon\fi,
+ \jr{Nucl. Instrum. Methods Phys. Res. B} \textbf{148}(1-4), 528--533 (1999).
+
+
+\bibitem{koegler03}% article
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+  \textsc{C.~Serre},  and  \textsc{A.~Perez-Rodriguez}\iffalse Synthesis of
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+
+
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+
+
+\bibitem{nejim95}% article
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+  synthesis at 950 [degree]{C}\fi,
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+
+
+\bibitem{serre95}% article
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+  \textsc{R.~K{\"{o}}gler},  and  \textsc{W.~Skorupa}\iffalse Spectroscopic
+  characterization of phases formed by high-dose carbon ion implantation in
+  silicon\fi,
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+
+
+\bibitem{bar-yam84}% article
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+
+
+\bibitem{car84}% article
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+
+
+\bibitem{bloechl93}% article
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+
+
+\bibitem{tang97}% article
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+
+
+\bibitem{leung99}% article
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+  \textsc{S.~Itoh},  and  \textsc{S.~Ihara}\iffalse Calculations of silicon
+  self-interstitial defects\fi,
+ \jr{Phys. Rev. Lett.} \textbf{83}(12), 2351--2354 (1999).
+
+
+\bibitem{al-mushadani03}% article
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+  calculations of intrinsic point defects in silicon\fi,
+ \jr{Phys. Rev. B} \textbf{68}(23), 235205 (2003).
+
+
+\bibitem{hobler05}% article
+ \textsc{G.~Hobler} and  \textsc{G.~Kresse}\iffalse Ab initio calculations of
+  the interaction between native point defects in silicon\fi,
+ \jr{Mater. Sci. Eng., B} \textbf{124-125}, 368--371 (2005),
+EMRS 2005, Symposium D - Materials Science and Device Issues for Future
+  Technologies.
+
+
+\bibitem{sahli05}% article
+ \textsc{B.~Sahli} and  \textsc{W.~Fichtner}\iffalse Ab initio molecular
+  dynamics simulation of self-interstitial diffusion in silicon\fi,
+ \jr{Phys. Rev. B} \textbf{72}(24), 245210 (2005).
+
+
+\bibitem{posselt08}% article
+ \textsc{M.~Posselt},  \textsc{F.~Gao},  and  \textsc{H.~Bracht}\iffalse
+  Correlation between self-diffusion in si and the migration mechanisms of
+  vacancies and self-interstitials: An atomistic study\fi,
+ \jr{Phys. Rev. B} \textbf{78}(3), 035208 (2008).
+
+
+\bibitem{ma10}% article
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+  mechanisms\fi,
+ \jr{Phys. Rev. B} \textbf{81}(19), 193203 (2010).
+
+
+\bibitem{tersoff90}% article
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+
+
+\bibitem{dal_pino93}% article
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+  Joannopoulos}\iffalse Ab initio investigation of carbon-related defects in
+  silicon\fi,
+ \jr{Phys. Rev. B} \textbf{47}(19), 12554--12557 (1993).
+
+
+\bibitem{capaz94}% article
+ \textsc{R.\,B. Capaz},  \textsc{A.~{Dal Pino}},  and  \textsc{J.\,D.
+  Joannopoulos}\iffalse Identification of the migration path of interstitial
+  carbon in silicon\fi,
+ \jr{Phys. Rev. B} \textbf{50}(11), 7439--7442 (1994).
+
+
+\bibitem{burnard93}% article
+ \textsc{M.\,J. Burnard} and  \textsc{G.\,G. DeLeo}\iffalse Interstitial carbon
+  and the carbon-carbon pair in silicon: Semiempirical electronic-structure
+  calculations\fi,
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+
+
+\bibitem{leary97}% article
+ \textsc{P.~Leary},  \textsc{R.~Jones},  \textsc{S.~{\"O}berg},  and
+  \textsc{V.\,J.\,B. Torres}\iffalse Dynamic properties of interstitial carbon
+  and carbon-carbon pair defects in silicon\fi,
+ \jr{Phys. Rev. B} \textbf{55}(4), 2188--2194 (1997).
+
+
+\bibitem{capaz98}% article
+ \textsc{R.\,B. Capaz},  \textsc{A.~{Dal Pino}},  and  \textsc{J.\,D.
+  Joannopoulos}\iffalse Theory of carbon-carbon pairs in silicon\fi,
+ \jr{Phys. Rev. B} \textbf{58}(15), 9845--9850 (1998).
+
+
+\bibitem{mattoni2002}% article
+ \textsc{A.~Mattoni},  \textsc{F.~Bernardini},  and
+  \textsc{L.~Colombo}\iffalse Self-interstitial trapping by carbon complexes in
+  crystalline silicon\fi,
+ \jr{Phys. Rev. B} \textbf{66}(19), 195214 (2002).
+
+
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+ \textsc{G.~Kresse} and  \textsc{J.~Furthm{\"{u}}ller}\iffalse Efficiency of
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+  plane-wave basis set\fi,
+ \jr{Comput. Mater. Sci.} \textbf{6}(1), 15--50 (1996).
+
+
+\bibitem{perdew86}% article
+ \textsc{J.\,P. Perdew} and  \textsc{Y.~Wang}\iffalse Accurate and simple
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+
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+ \textsc{J.\,P. Perdew},  \textsc{J.\,A. Chevary},  \textsc{S.\,H. Vosko},
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+  and  \textsc{C.~Fiolhais}\iffalse Atoms, molecules, solids, and surfaces:
+  Applications of the generalized gradient approximation for exchange and
+  correlation\fi,
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+
+
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+
+
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+
+
+\bibitem{kaukonen98}% article
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+  and  \textsc{T.~Frauenheim}\iffalse Effect of {N} and {B} doping on the
+  growth of {CVD} diamond $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
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+ \textsc{P.~Erhart} and  \textsc{K.~Albe}\iffalse Analytical potential for
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+
+\bibitem{berendsen84}% article
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+
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+
+
+\bibitem{watkins76}% article
+ \textsc{G.\,D. Watkins} and  \textsc{K.\,L. Brower}\iffalse {EPR} observation
+  of the isolated interstitial carbon atom in silicon\fi,
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+
+
+\bibitem{song90}% article
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+ \jr{Phys. Rev. B} \textbf{42}(9), 5759--5764 (1990).
+
+
+\bibitem{lindner06}% article
+ \textsc{J.\,K.\,N. Lindner},  \textsc{M.~H{\"a}berlen},
+  \textsc{G.~Thorwarth},  and  \textsc{B.~Stritzker}\iffalse On the balance
+  between ion beam induced nanoparticle formation and displacive precipitate
+  resolution in the {C}-si system\fi,
+ \jr{Mater. Sci. Eng., C} \textbf{26}(5-7), 857--861 (2006),
+Current Trends in Nanoscience - from Materials to Applications.
+
+
+\bibitem{tipping87}% article
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+
+
+\bibitem{zirkelbach11}% article
+ \textsc{F.~Zirkelbach},  \textsc{B.~Stritzker},  \textsc{K.~Nordlund},
+  \textsc{J.\,K.\,N. Lindner},  \textsc{W.\,G. Schmidt},  and
+  \textsc{E.~Rauls}\iffalse Combined \textit{ab initio} and classical potential
+  simulation study on silicon carbide precipitation in silicon\fi,
+ \jr{Phys. Rev. B} \textbf{84}(August), 064126 (2011).
+
+
+\bibitem{zirkelbach10}% article
+ \textsc{F.~Zirkelbach},  \textsc{B.~Stritzker},  \textsc{K.~Nordlund},
+  \textsc{J.\,K.\,N. Lindner},  \textsc{W.\,G. Schmidt},  and
+  \textsc{E.~Rauls}\iffalse Defects in carbon implanted silicon calculated by
+  classical potentials and first-principles methods\fi,
+ \jr{Phys. Rev. B} \textbf{82}(9), 094110 (2010).
+
+
+\end{thebibliography}
+
+
+\end{document}