From 09fb8209a99f5cbd1618dc997121d60a2c76e629 Mon Sep 17 00:00:00 2001 From: hackbard Date: Sat, 11 Sep 2010 16:08:36 +0200 Subject: [PATCH] small changes to abstarct (that i forgot) --- posic/publications/defect_combos.tex | 4 ++-- 1 file changed, 2 insertions(+), 2 deletions(-) diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex index d36744f..07c196f 100644 --- a/posic/publications/defect_combos.tex +++ b/posic/publications/defect_combos.tex @@ -34,8 +34,8 @@ We investigated the migration mechanism of a carbon \hkl<1 0 0> interstitial and The influence of a nearby vacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been investigated systematically. Interactions of various combinations of defects have been characterized including a couple of selected migration pathways within these configurations. Almost all of the investigated pairs of defects tend to agglomerate allowing for a reduction in strain. -The formation of structures involving strong carbon-carbon bonds was found to occur very unlikely. -In contrast, substitutional carbon was found to occur in all probability. +The formation of structures involving strong carbon-carbon bonds has been found to occur very unlikely. +In contrast, substitutional carbon occurs in all probability. A long range capture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A rather small capture radius has been identified for substitutional carbon and silicon self-interstitials. We derive conclusions on the precipitation mechanism of silicon carbide in bulk silicon and discuss conformability to experimental findings. -- 2.20.1