From 0be3170f71ac64329a837ad430a4561ce2bc9a90 Mon Sep 17 00:00:00 2001 From: hackbard Date: Tue, 9 Aug 2011 20:16:06 +0200 Subject: [PATCH] corrected paragraph --- posic/thesis/summary_outlook.tex | 1 - 1 file changed, 1 deletion(-) diff --git a/posic/thesis/summary_outlook.tex b/posic/thesis/summary_outlook.tex index 88d022b..c479767 100644 --- a/posic/thesis/summary_outlook.tex +++ b/posic/thesis/summary_outlook.tex @@ -3,7 +3,6 @@ {\bf To summarize}, in a short review of the C/Si compound and the fabrication of the technologically promising semiconductor SiC by IBS, two controversial assumptions of the precipitation mechanism of 3C-SiC in c-Si are elaborated. -} These propose the precipitation of SiC by agglomeration of \ci{} DBs followed by a sudden formation of SiC and otherwise a formation by successive accumulation of \cs{} via intermediate stretched SiC structures, which are coherent to the Si lattice. To solve this controversy and contribute to the understanding of SiC precipitation in c-Si, a series of atomistic simulations is carried out. In the first part, intrinsic and C related point defects in c-Si as well as some selected diffusion processes of the C defect are investigated by means of first-principles quantum-mechanical calculations based on DFT and classical potential calculations employing a Tersoff-like analytical bond order potential. -- 2.20.1