From 145b878c64a2642661db90afb09729fd163e65a9 Mon Sep 17 00:00:00 2001 From: hackbard Date: Wed, 30 Apr 2008 19:24:24 +0200 Subject: [PATCH] renamed bibdb! + fixes --- bibdb/{bibdb.tex => bibdb.bib} | 28 ++++++++++++++-------------- 1 file changed, 14 insertions(+), 14 deletions(-) rename bibdb/{bibdb.tex => bibdb.bib} (93%) diff --git a/bibdb/bibdb.tex b/bibdb/bibdb.bib similarity index 93% rename from bibdb/bibdb.tex rename to bibdb/bibdb.bib index f755d9a..5f4379d 100644 --- a/bibdb/bibdb.tex +++ b/bibdb/bibdb.bib @@ -16,7 +16,7 @@ eid = {035211}, numpages = {14}, pages = {035211}, - notes = {alble reparametrization, analytical bond oder potential (ABOP)} + notes = {alble reparametrization, analytical bond oder potential (ABOP)}, keywords = {silicon; elemental semiconductors; carbon; silicon compounds; wide band gap semiconductors; elasticity; enthalpy; point defects; crystallographic shear; atomic forces}, @@ -36,8 +36,8 @@ year = {2002}, month = {May}, doi = {10.1103/PhysRevB.65.195124}, - publisher = {American Physical Society} - notes = {derivation of albe bond order formalism} + publisher = {American Physical Society}, + notes = {derivation of albe bond order formalism}, } @Article{koster2002, @@ -51,7 +51,7 @@ year = {2000}, month = {Oct}, doi = {10.1103/PhysRevB.62.11219}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {virial derivation for 3-body tersoff potential} } @@ -67,7 +67,7 @@ year = {1999}, month = {Nov}, doi = {10.1103/PhysRevB.60.12610}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {virial derivation for 3-body tersoff potential} } @@ -84,7 +84,7 @@ year = {1987}, month = {Jun}, doi = {10.1103/PhysRevB.35.9552}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {selft-interstitials in silicon, stillinger-weber, calculation of defect formation energy, defect interstitial types} } @@ -100,7 +100,7 @@ year = {1989}, month = {Jun}, doi = {10.1103/PhysRevB.39.13013}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {stillinger-weber silicon 110 stable and metastable dumbbell configuration} } @@ -120,12 +120,12 @@ year = {1997}, month = {Jun}, doi = {10.1103/PhysRevB.55.14279}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {si self interstitial, diffusion, tbmd} } @Article{tang97, - title = {Tight-binding theory of native point defects in silicon} + title = {Tight-binding theory of native point defects in silicon}, author = {L. Colombo}, journal = {Annu. Rev. Mater. Res.}, volume = {32}, @@ -133,7 +133,7 @@ numpages = {25}, year = {2002}, doi = {10.1146/annurev.matsci.32.111601.103036}, - publisher = {Annual Reviews} + publisher = {Annual Reviews}, notes = {si self interstitial, tbmd, virial stress} } @@ -151,7 +151,7 @@ year = {2001}, month = {Dec}, doi = {10.1103/PhysRevB.64.245208}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {defects in 3c-sic} } @@ -169,7 +169,7 @@ year = {1999}, month = {Sep}, doi = {10.1103/PhysRevLett.83.2351}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {nice images of the defects} } @@ -185,7 +185,7 @@ year = {1994}, month = {Sep}, doi = {10.1103/PhysRevB.50.7439}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {carbon interstitial migration path shown, 001 c-si dumbbell} } @@ -202,7 +202,7 @@ year = {1976}, month = {May}, doi = {10.1103/PhysRevLett.36.1329}, - publisher = {American Physical Society} + publisher = {American Physical Society}, notes = {epr observations of 100 interstitial carbon atom in silicon} } -- 2.20.1