From 2d8c0065529a76ac15b8f7ac4a25408d8bf11ec8 Mon Sep 17 00:00:00 2001 From: hackbard Date: Mon, 19 Apr 2010 18:03:23 +0200 Subject: [PATCH] start with increased temp pc --- posic/thesis/md.tex | 27 ++++++++++++++++++++++++++- 1 file changed, 26 insertions(+), 1 deletion(-) diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex index a51304e..8860ce2 100644 --- a/posic/thesis/md.tex +++ b/posic/thesis/md.tex @@ -280,7 +280,32 @@ By this, bulk 3C-SiC will still result in $Q=1$ and precipitates will also reach However, since the quality value does not account for bond lengthes, bond angles, crystallinity or the stacking sequence high values of $Q$ not necessarily correspond to structures close to 3C-SiC. Structures that look promising due to high quality values need to be further investigated by other means. -Figure ... shows the radial distribution of Si-C bonds and the corresponding quality paragraphs. +\begin{figure}[!ht] +\begin{center} +\includegraphics[width=12cm]{tot_pc_thesis.ps}\\ +\includegraphics[width=12cm]{tot_ba.ps} +\end{center} +\caption[Si-C radial distribution and quality evolution for the low concentration simulations at different elevated temperatures.]{Si-C radial distribution and quality evolution for the low concentration simulations at different elevated temperatures. All structures are cooled down to $20\,^{\circ}\mathrm{C}$. Arrows in the quality plot mark the end of carbon insertion and the start of the cooling down step.} +\label{fig:md:tot_si-c_q} +\end{figure} +Figure \ref{fig:md:tot_si-c_q} shows the radial distribution of Si-C bonds for different temperatures and the corresponding quality evolution as defined earlier. + +Cut-off vanisches, thats a nice win ... + +Further explanation of PC ... + +100 to sub configurations ... + +This is reflected in the qualities obtained for different temperatures. + +\begin{figure}[!ht] +\begin{center} +\includegraphics[width=12cm]{tot_pc2_thesis.ps}\\ +\includegraphics[width=12cm]{tot_pc3_thesis.ps} +\end{center} +\caption[C-C and Si-Si radial distribution for the low concentration simulations at different elevated temperatures.]{C-C and Si-Si radial distribution for the low concentration simulations at different elevated temperatures. All structures are cooled down to $20\,^{\circ}\mathrm{C}$.} +\label{fig:md:tot_c-c_si-si} +\end{figure} \subsection{Constructed 3C-SiC precipitate in crystalline silicon} -- 2.20.1