From 3f10529dca72b892262f61b335dc80d7358b39cb Mon Sep 17 00:00:00 2001 From: hackbard Date: Wed, 1 Sep 2010 02:09:13 +0200 Subject: [PATCH] zzZzzz --- posic/publications/defect_combos.tex | 2 +- 1 file changed, 1 insertion(+), 1 deletion(-) diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex index 8226e0c..95d340d 100644 --- a/posic/publications/defect_combos.tex +++ b/posic/publications/defect_combos.tex @@ -541,7 +541,7 @@ The rearrangement is crucial to end up in a configuration of C atoms only occupy On the other hand the conversion of some region of Si into SiC by substitutional C is accompanied by a reduction of the volume since SiC exhibits a \unit[20]{\%} smaller lattice constant than Si. The reduction in volume is compensated by excess Si$_{\text{i}}$ serving as building blocks for the surrounding Si host or a further formation of SiC. -It is, thus, concluded that precipitation occurs by a successive agglomeration of C$_{\text{s}}$. +It is, thus, concluded that precipitation occurs by successive agglomeration of C$_{\text{s}}$. However, the process is governed by both, C$_{\text{s}}$ accompanied by Si$_{\text{i}}$ as well as C$_{\text{i}}$. ... HIER WEITER ... By this, explains the alignment of the \hkl(h k l) lattice planes of the precipitate and the substrate. -- 2.20.1