From 469ebfe33bad746b0312d93cd974c765e7ddf6ee Mon Sep 17 00:00:00 2001
From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Tue, 11 Nov 2008 19:16:41 +0100
Subject: [PATCH] security checkin ...

---
 posic/talks/seminar_2008.tex | 54 ++++++++++++++++++++++--------------
 1 file changed, 33 insertions(+), 21 deletions(-)

diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex
index 667e2c2..43912fb 100644
--- a/posic/talks/seminar_2008.tex
+++ b/posic/talks/seminar_2008.tex
@@ -2,7 +2,7 @@
 \documentclass[landscape,semhelv]{seminar}
 
 \usepackage{verbatim}
-\usepackage[german]{babel}
+\usepackage[greek,german]{babel}
 \usepackage[latin1]{inputenc}
 \usepackage[T1]{fontenc}
 \usepackage{amsmath}
@@ -44,6 +44,8 @@
 %\renewcommand{\familydefault}{\sfdefault}
 %\usepackage{mathptmx}
 
+\usepackage{upgreek}
+
 \begin{document}
 
 \extraslideheight{10in}
@@ -150,20 +152,20 @@
 
  \begin{itemize}
   \item Hochfrequenz-, Hochtemperatur und Hochleistungsbauelemente
-  \item blaue LEDs
+  \item Optoelektronik (blaue LEDs), Sensoren
   \item Kandidat f"ur Tr"ager und W"ande in Fusionsreaktoren
-  \item Luft- und Raumfahrtindistrie, Milit"ar
+  \item Luft- und Raumfahrtindustrie, Milit"ar
   \item kohlenfaserverst"arkte SiC-Verbundkeramik
  \end{itemize}
 
  }
 
- \begin{picture}(0,0)(-275,-150)
-  \includegraphics[width=4cm]{sic_inverter_ise.eps} 
+ \begin{picture}(0,0)(-278,-150)
+  %\includegraphics[width=4cm]{sic_inverter_ise.eps} 
  \end{picture}
  
- \begin{picture}(0,0)(-275,-20)
-  \includegraphics[width=4cm]{cc_sic_brake_dlr.eps} 
+ \begin{picture}(0,0)(-278,-20)
+  %\includegraphics[width=4cm]{cc_sic_brake_dlr.eps} 
  \end{picture}
  
 \end{slide}
@@ -174,27 +176,35 @@
   Motivation
  }
 
- Problem:
-
- However, in order to become economically viable, several critical materials and processing issues still need to be solved. The most serious issue is the immature state of the crystal growth technology, where increases in wafer size and quality are urgently needed.
-
- Und andersrum:
+ 3C-SiC (\foreignlanguage{greek}{b}-SiC) /
+ 6H-SiC (\foreignlanguage{greek}{a}-SiC)
+ \begin{itemize}
+  \item h"ohere Ladungstr"agerbeweglichkeit in \foreignlanguage{greek}{b}-SiC
+  \item Micropipes (Offene Kerne von Schraubenversetzungen) in c-Richtung
+        bei \foreignlanguage{greek}{a}-SiC
+  \item Herstellung gro"sfl"achiger einkristalliner 3C-SiC Filme
+        im Anfangsstudium
+ \end{itemize}
 
- Modifikation der Bandl"ucke und Spannungen in Heterostrukturen
+ \begin{center}
+  {\color{red}
+  Einsicht in den Mechanismus des 3C-SiC-Ausscheidungsvorganges\\
+  }
+  $\Rightarrow$\\ 
+  signifikanter technologischen Fortschritt in 3C-SiC D"unnschichtherstellung
+ \end{center}
 
- Kein SiC-Ausscheidungsvorgang erw"unscht!
+ \vspace{12pt}
 
- {\tiny
-  [1] J. H. Edgar, J. Mater. Res. 7 (1992) 235.}\\
- {\tiny
-  [2] J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
-      J. K. Watanabe, J. W. Mayer, J. Appl. Phys. 79 (1996) 637.}
+ Vermeidung von SiC-Ausscheidungen
 
+ \begin{itemize}
+  \item Ma"sschneidern der Bandl"ucke
+  \item gestreckte Heterostrukturen
+ \end{itemize}
 
 \end{slide}
 
-\end{document}
-
 \begin{slide}
 
  {\large\bf
@@ -229,6 +239,8 @@
 
 \end{slide}
 
+\end{document}
+
  \small
 \begin{slide}
 
-- 
2.20.1