From 54d6d0884338af67565f9f4e4ae77c40e3aac4d1 Mon Sep 17 00:00:00 2001
From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Wed, 12 Nov 2008 17:46:49 +0100
Subject: [PATCH] safety checkin -> attac campus, mechanismus 1

---
 posic/talks/seminar_2008.tex | 67 ++++++++++++++++++++++--------------
 1 file changed, 42 insertions(+), 25 deletions(-)

diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex
index 43912fb..84559f3 100644
--- a/posic/talks/seminar_2008.tex
+++ b/posic/talks/seminar_2008.tex
@@ -151,7 +151,7 @@
  Anwendungen:
 
  \begin{itemize}
-  \item Hochfrequenz-, Hochtemperatur und Hochleistungsbauelemente
+  \item Hochfrequenz-, Hochtemperatur- und Hochleistungsbauelemente
   \item Optoelektronik (blaue LEDs), Sensoren
   \item Kandidat f"ur Tr"ager und W"ande in Fusionsreaktoren
   \item Luft- und Raumfahrtindustrie, Milit"ar
@@ -160,11 +160,11 @@
 
  }
 
- \begin{picture}(0,0)(-278,-150)
+ \begin{picture}(0,0)(-280,-150)
   %\includegraphics[width=4cm]{sic_inverter_ise.eps} 
  \end{picture}
  
- \begin{picture}(0,0)(-278,-20)
+ \begin{picture}(0,0)(-280,-20)
   %\includegraphics[width=4cm]{cc_sic_brake_dlr.eps} 
  \end{picture}
  
@@ -176,6 +176,8 @@
   Motivation
  }
 
+ \vspace{8pt}
+
  3C-SiC (\foreignlanguage{greek}{b}-SiC) /
  6H-SiC (\foreignlanguage{greek}{a}-SiC)
  \begin{itemize}
@@ -186,20 +188,23 @@
         im Anfangsstudium
  \end{itemize}
 
+ \vspace{16pt}
+
  \begin{center}
   {\color{red}
-  Einsicht in den Mechanismus des 3C-SiC-Ausscheidungsvorganges\\
+  Genaues Verst"andnis des 3C-SiC-Ausscheidungsvorganges\\
   }
-  $\Rightarrow$\\ 
+  $\Downarrow$\\ 
   signifikanter technologischen Fortschritt in 3C-SiC D"unnschichtherstellung
  \end{center}
 
- \vspace{12pt}
+ \vspace{16pt}
 
- Vermeidung von SiC-Ausscheidungen
+ Vermeidung von SiC-Ausscheidungen in
+ $\text{Si}_{\text{1-y}}\text{C}_{\text{y}}$ Legierungen
 
  \begin{itemize}
-  \item Ma"sschneidern der Bandl"ucke
+  \item Ma"sschneidern der elektronischen Eigenschaften von Si
   \item gestreckte Heterostrukturen
  \end{itemize}
 
@@ -208,27 +213,39 @@
 \begin{slide}
 
  {\large\bf
-  Crystalline silicon and cubic silicon carbide
+  Motivation bzw. SiC-Ausscheidungsvorgang
+ }
+
+ \vspace{64pt}
+
+ Noch was zur Herstellung rein ...
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+  SiC-Ausscheidungsvorgang
  }
 
  \vspace{8pt}
 
- {\bf Lattice types and unit cells:}
+ {\bf Kristallstruktur und Einheitszelle:}
  \begin{itemize}
-   \item Crystalline silicon (c-Si) has diamond structure\\
-         $\Rightarrow {\color{si-yellow}\bullet}$ and
-         ${\color{gray}\bullet}$ are Si atoms
-   \item Cubic silicon carbide (3C-SiC) has zincblende structure\\
-         $\Rightarrow {\color{si-yellow}\bullet}$ are Si atoms,
-         ${\color{gray}\bullet}$ are C atoms
+   \item kristallines Silizium (c-Si): Diamantstruktur\\
+         ${\color{si-yellow}\bullet}$, ${\color{gray}\bullet}$
+         $\leftarrow$ Si-Atome
+   \item kubisches SiC (3C-SiC): Zinkblende-Struktur\\
+         ${\color{si-yellow}\bullet} \leftarrow$ Si-Atome\\
+         ${\color{gray}\bullet} \leftarrow$ C-Atome
  \end{itemize}
  \vspace{8pt}
  \begin{minipage}{8cm}
- {\bf Lattice constants:}
+ {\bf Gitterkonstanten:}
  \[
  4a_{\text{c-Si}}\approx5a_{\text{3C-SiC}}
  \]
- {\bf Silicon density:}
+ {\bf Siliziumdichten:}
  \[
  \frac{n_{\text{3C-SiC}}}{n_{\text{c-Si}}}=97,66\,\%
  \]
@@ -239,19 +256,17 @@
 
 \end{slide}
 
-\end{document}
-
  \small
 \begin{slide}
 
  {\large\bf
-  Supposed Si to 3C-SiC conversion
+  SiC-Ausscheidungsvorgang
  }
 
  \small
  \vspace{6pt}
 
- Supposed conversion mechanism of heavily carbon doped Si into SiC:
+ Vermuteter SiC-Ausscheidungsvorgang in Si:
 
  \vspace{8pt}
 
@@ -270,15 +285,15 @@
  \vspace{8pt}
 
  \begin{minipage}{3.8cm}
- Formation of C-Si dumbbells on regular c-Si lattice sites
+ Bildung von C-Si Dumbbells auf regul"aren c-Si Gitterpl"atzen
  \end{minipage}
  \hspace{0.6cm}
  \begin{minipage}{3.8cm}
- Agglomeration into large clusters (embryos)\\
+ Anh"aufung hin zu gro"sen Clustern (Embryos)\\
  \end{minipage}
  \hspace{0.6cm}
  \begin{minipage}{3.8cm}
- Precipitation of 3C-SiC + Creation of interstitials\\
+ Ausscheidung von 3C-SiC + Erzeugung von Si-Zwischengitteratomen\\
  \end{minipage}
 
  \vspace{12pt}
@@ -298,6 +313,8 @@
 
 \end{slide}
 
+\end{document}
+
 \begin{slide}
 
  {\large\bf
-- 
2.20.1