From 615bd57198790f7e2c30a5145060540b1cfb8158 Mon Sep 17 00:00:00 2001 From: hackbard Date: Thu, 2 Sep 2010 01:31:33 +0200 Subject: [PATCH] zzZzz --- posic/publications/defect_combos.tex | 9 +++++++-- 1 file changed, 7 insertions(+), 2 deletions(-) diff --git a/posic/publications/defect_combos.tex b/posic/publications/defect_combos.tex index a14f6ce..8f3af45 100644 --- a/posic/publications/defect_combos.tex +++ b/posic/publications/defect_combos.tex @@ -570,8 +570,13 @@ In summary, C and Si point defects in Si, combinations of these defects and diff It is shown that C interstitials in Si tend to agglomerate, which is mainly driven by a reduction of strain. Investigations of migration pathways, however, allow to conclude that C clustering fails to appear by thermally activated processes due to high activation energies of the the respective diffusion processes. A highly attractive interaction and a large capture radius has been identified for the C$_{\text{i}}$ \hkl<1 0 0> DB and the vacancy indicating a high probability for the formation of C$_{\text{s}}$ -In contrast, a rapidly decreasing interaction with respect to the separation distance has been identified for C$_{\text{s}}$ and a Si$_{\text{i}}$ \hkl<1 1 0> DB resulting in a low probability of defects exhibiting respective separations ... -These findings suggest an increased ... in prec model .... +In contrast, a rapidly decreasing interaction with respect to the separation distance has been identified for C$_{\text{s}}$ and a Si$_{\text{i}}$ \hkl<1 1 0> DB resulting in a low probability of defects exhibiting respective separations to transform into the C$_{\text{i}}$ \hkl<1 0 0> DB, which constitutes the ground state configuration for a C atom introduced into otherwise perfect Si. +Based on these findings conclusions on basic processes involved in the SiC precipitation in bulk Si are drawn. +It is concluded that the precipitation process is governed by the formation of C$_{\text{s}}$ already in the initial stages. +Agglomeration and rearrangement of C$_{\text{s}}$, however, is only possible by mobile C$_{\text{i}}$, which, thus, needs to be present at the same time. +It is concluded that the precipitation proceeds by a successive occupation of Si lattice sites by C$_{\text{s}}$. +However, rearrangement and agglomeration of these C atoms is only possible by forming acting as a vehicle for ... + % ---------------------------------------------------- \section*{Acknowledgment} -- 2.20.1