From 6207cee9e7f4c6025d08bb5491985652071324ed Mon Sep 17 00:00:00 2001
From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Thu, 26 May 2011 00:24:12 +0200
Subject: [PATCH 1/1] other mechanisms

---
 posic/talks/seminar_2011.tex | 104 +++++++++++++++++++++++++++++++++++
 1 file changed, 104 insertions(+)

diff --git a/posic/talks/seminar_2011.tex b/posic/talks/seminar_2011.tex
index ca6b07f..1acb375 100644
--- a/posic/talks/seminar_2011.tex
+++ b/posic/talks/seminar_2011.tex
@@ -483,6 +483,110 @@ r = 2 - 4 nm
 
 \end{slide}
 
+\begin{slide}
+
+ {\large\bf
+  Supposed precipitation mechanism of SiC in Si
+ }
+
+ \scriptsize
+
+ \vspace{0.1cm}
+
+ \begin{minipage}{3.8cm}
+ Si \& SiC lattice structure\\[0.2cm]
+ \includegraphics[width=3.5cm]{sic_unit_cell.eps}\\[-0.3cm]
+ \hrule
+ \end{minipage}
+ \hspace{0.6cm}
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{tem_c-si-db.eps}
+ \end{center}
+ \end{minipage}
+ \hspace{0.6cm}
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{tem_3c-sic.eps}
+ \end{center}
+ \end{minipage}
+
+ \begin{minipage}{4cm}
+ \begin{center}
+ C-Si dimers (dumbbells)\\[-0.1cm]
+ on Si interstitial sites
+ \end{center}
+ \end{minipage}
+ \hspace{0.2cm}
+ \begin{minipage}{4.2cm}
+ \begin{center}
+ Agglomeration of C-Si dumbbells\\[-0.1cm]
+ $\Rightarrow$ dark contrasts
+ \end{center}
+ \end{minipage}
+ \hspace{0.2cm}
+ \begin{minipage}{4cm}
+ \begin{center}
+ Precipitation of 3C-SiC in Si\\[-0.1cm]
+ $\Rightarrow$ Moir\'e fringes\\[-0.1cm]
+ \& release of Si self-interstitials
+ \end{center}
+ \end{minipage}
+
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{sic_prec_seq_01.eps}
+ \end{center}
+ \end{minipage}
+ \hspace{0.6cm}
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{sic_prec_seq_02.eps}
+ \end{center}
+ \end{minipage}
+ \hspace{0.6cm}
+ \begin{minipage}{3.8cm}
+ \begin{center}
+ \includegraphics[width=3.3cm]{sic_prec_seq_03.eps}
+ \end{center}
+ \end{minipage}
+
+\begin{pspicture}(0,0)(0,0)
+\psline[linewidth=4pt]{->}(8.5,2)(9.0,2)
+\psellipse[linecolor=blue](11.5,5.8)(0.3,0.5)
+\rput{-20}{\psellipse[linecolor=blue](3.3,8.1)(0.3,0.5)}
+\psline[linewidth=4pt]{->}(4.0,2)(4.5,2)
+\rput(12.7,0.3){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{
+ $4a_{\text{Si}}=5a_{\text{SiC}}$
+ }}}
+\rput(12.2,8){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{
+\hkl(h k l) planes match
+ }}}
+\rput(9.7,6.2){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=hb]{
+r = 2 - 4 nm
+ }}}
+\rput(4.7,6.2){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=red]{
+\begin{minipage}{6cm}
+\vspace*{0.1cm}
+IBS studies revealing controversial views\\
+\begin{itemize}
+\item Nejim et al.
+ \begin{itemize}
+  \item Topotactic transformation based on \cs
+  \item \si as supply reacting with further C in cleared volume
+ \end{itemize}
+\item Serre, Reeson, Lindner ...
+ \begin{itemize}
+  \item RT implants: highly mobile C
+  \item elevated T implants: no/low C redistribution/migration
+ \end{itemize}
+\end{itemize}
+\end{minipage}
+ }}}
+\end{pspicture}
+
+\end{slide}
+
 \begin{slide}
 
  {\large\bf
-- 
2.20.1