From 68163c42a1a0efaecfdabc56feecae1d2bc4b3ce Mon Sep 17 00:00:00 2001
From: hackbard <hackbard@sage.physik.uni-augsburg.de>
Date: Mon, 17 Nov 2008 17:59:45 +0100
Subject: [PATCH] anfang prec ergebnisse - hurry up!

---
 posic/talks/seminar_2008.tex | 54 +++++++++++++++++++-----------------
 1 file changed, 29 insertions(+), 25 deletions(-)

diff --git a/posic/talks/seminar_2008.tex b/posic/talks/seminar_2008.tex
index d5ea0ee..226bd5a 100644
--- a/posic/talks/seminar_2008.tex
+++ b/posic/talks/seminar_2008.tex
@@ -289,7 +289,7 @@
         in gr"o"ser werdenden amorphen Grenzschichten 
   \item Tempern:
         $T=1250 \, ^{\circ} \text{C}$, $t=10\text{ h}$\\
-        Homogene, st"ochiometrische 3C-SiC Schicht mit
+        Homogene st"ochiometrische 3C-SiC Schicht mit
         scharfen Grenzfl"achen
  \end{itemize}
  
@@ -355,10 +355,24 @@
   SiC-Ausscheidungsvorgang
  }
 
- \vspace{64pt}
+ Hochaufl"osungs-TEM:\\[-0.5cm]
 
- Hier die aus experimentellen Untersuchungen heraus vermuteten
- Ausscheidungsvorgaenge rein.
+ \begin{minipage}{3.3cm}
+ \includegraphics[width=3.3cm]{tem_c-si-db.eps}
+ \end{minipage}
+ \begin{minipage}{9cm}
+  Bereich oberhalb des Implantationsmaximums\\
+  Wolkenstruktur "uberlagert auf ungest"orten Si-Muster\\
+  $\rightarrow$ C-Si Dumbbells
+ \end{minipage}
+ \begin{minipage}{3.3cm}
+ \includegraphics[width=3.3cm]{tem_3c-sic.eps}
+ \end{minipage}
+ \begin{minipage}{9cm}
+  Bereich ums Implantationsmaximum\\
+  Moir\'e-Kontrast-Muster\\
+  $\rightarrow$ inkoh"arente 3C-SiC-Ausscheidungen in c-Si-Matrix
+ \end{minipage}
 
 \end{slide}
 
@@ -612,17 +626,11 @@
  \begin{minipage}{4cm}
  \begin{itemize}
   \item $E_f=0.47$ eV
-  \item Very often observed
-  \item Most energetically\\
-        favorable configuration
-  \item Experimental\\
-        evidence [6]
+  \item sehr h"aufig beobachtet
+  \item energetisch g"unstigste Konfiguration
+  \item experimentelle und theoretische Best"atigungen
+        f"ur die Existenz dieser Konfiguration
  \end{itemize}
- \vspace{24pt}
- {\tiny
-  [6] G. D. Watkins and K. L. Brower,\\
-      Phys. Rev. Lett. 36 (1976) 1329.
- }
  \end{minipage}
  \begin{minipage}{8cm}
  \includegraphics[width=9cm]{100-c-si-db_s.eps}
@@ -667,8 +675,8 @@
    \end{itemize} 
   }}}}
   \rput(3.5,1){\rnode{cool}{\psframebox[fillstyle=solid,fillcolor=lbb]{
-   \parbox{3.5cm}{
-   Abk"uhlen auf $20\, ^{\circ}\textrm{C}$
+   \parbox{5.0cm}{
+   Nach 100 ps abk"uhlen auf $20\, ^{\circ}\textrm{C}$
   }}}}
   \ncline[]{->}{init}{insert}
   \ncline[]{->}{insert}{cool}
@@ -685,8 +693,6 @@
 
 \end{slide}
 
-\end{document}
-
 \begin{slide}
 
  {\large\bf
@@ -697,16 +703,14 @@
  \includegraphics[width=6.3cm]{pc_si-si.eps}
 
  \begin{minipage}[t]{6.3cm}
- \tiny
+ \scriptsize
     \begin{itemize}
-      \item C-C peak at 0.15 nm similar to next neighbour distance of graphite
-            or diamond\\
+      \item C-C, 0.15 nm: NN-Abstand in Graphit bzw. Diamant\\
             $\Rightarrow$ Formation of strong C-C bonds
                           (almost only for high C concentrations)
-      \item Si-C peak at 0.19 nm similar to next neighbour distance in 3C-SiC
-      \item C-C peak at 0.31 nm equals C-C distance in 3C-SiC\\
-            (due to concatenated, differently oriented
-             <100> dumbbell interstitials)
+      \item Si-C, 0.19 nm: NN-Abstand in 3C-SiC
+      \item C-C, 0.31 nm: C-C Abstand in 3C-SiC\\
+            (vekettetrkettete, verschieden orientierte 100 C-Si Dumbbells)
       \item Si-Si shows non-zero g(r) values around 0.31 nm like in 3C-SiC\\
             and a decrease at regular distances\\
             (no clear peak,
-- 
2.20.1