From 8b564b775ab6cf010f2f28844ac73316c2545240 Mon Sep 17 00:00:00 2001 From: hackbard Date: Wed, 12 Jan 2011 16:53:44 +0100 Subject: [PATCH] more on epitaxy --- posic/thesis/sic.tex | 3 +++ 1 file changed, 3 insertions(+) diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex index 3514066..eb3dbeb 100644 --- a/posic/thesis/sic.tex +++ b/posic/thesis/sic.tex @@ -155,6 +155,9 @@ Further efforts have to be expended to find relations between the growth paramet Crystalline SiC layers have been grown by a large number of techniques on the surfaces of different substrates. Most of the crystal growth processes are based on chemical vapor deposition (CVD), solid-source molecular beam epitaxy (MBE) and gas-source MBE on Si as well as SiC substrates, which will be exclusively reviewed in the following. +The availability and reproducibility of Si substrates of controlled purity made it the first choice for SiC epitaxy. +The heteroepitaxial growth of SiC on Si substrates has been stimulated for a long time due to the lack of suitable large substrates that could be adopted for homoepitaxial growth. +Furthermore, heteroepitaxy on Si substrates enables the fabrication of the advantageous 3C polytype, which constitutes a metastable phase and, thus, can be grown as a bulk crystal only with small sizes of a few mm. \section{Ion beam synthesis of cubic silicon carbide} -- 2.20.1